IXTN110N20L2
SOT227B-packaged single transistor module engineered for 200V operation and 100A current handling
IXYS
9,586
IXFN82N60Q3
IXFN82N60Q3 is a power MOSFET designed for N-channel operation
IXYS
8,548
IXFN80N50P
MOSFET with a 500V voltage rating and a maximum current capacity of 66A
Littelfuse
8,515
MCO100-12IO1
SCR Module 1200V 1500A 4-Pin SOT-227B
IXYS
9,053
TGHGCR0500FE
Res Thick Film 0.05 Ohm 1% 100W ±500ppm/°C SOT-227 Screw Terminal Bolt-On
Ohmite
6,355
VBE60-06A
600V 60 Amps Bridge Rectifiers
IXYS
9,399
VS-GB90DA120U
62W SOT227 IGBT module 1200V 149A
Vishay General Semiconductor - Diodes Division
5,687
VS-FC270SA20
Discrete Semiconductor Modules 200V, 3.3mOhm, 270A SOT-227 Pwr Mod
Vishay
7,628
VS-QA300FA17
Discrete Semiconductor Modules 250V, 250A, Gen 2 Sctky Rectifier Mod
Vishay
7,400
VS-UFB80FA20
Diode Switching 40A 4-Pin SOT-227
Vishay General Semiconductor - Diodes Division
5,849
IXGN400N60B3
No brokers permitted, only OEMs and CMs
IXYS
6,356
STGE50NC60WD
N-channel Insulated Gate Bipolar Transistor (IGBT) Module with 600V Voltage Rating and 100A Current Capacity, delivering 260000mW power
STMicroelectronics
9,925
IXFN38N100P
1kV N-channel MOSFET with 38A current rating and 210mΩ resistance at 10V
IXYS
8,780
IXFN60N80P
N-channel MOSFET Transistor & Diode, IXYS IXFN60N80P, 800V, 53A, 4-Pin SOT-227B
Littelfuse
5,340
IXYN120N120C3
High power IGBT with 1200V voltage rating in SOT227B housing
IXYS
6,097
IXTN21N100
Discrete Semiconductor Modules with 21 Amps and 100V rating, featuring a low resistance of 0.55 Ohm
Ixys
7,113
APT8015JVFR
High-power single transistor module APT8015JVFR with 800V voltage rating
Microchip
6,532
IXFN50N50
IXFN50N50 is a high-performance Discrete Semiconductor Module offering 50 Amps at 500V with a low 0.1 Ohm Rds
Ixys
8,045
IXKN45N80C
Power Field-Effect Transistor with 44A I(D)
IXYS
7,727
VS-FC420SA15
Discrete Semiconductor Modules 150V, 1.93mOhm, 400A SOT-227 Pwr Mod
Vishay
8,205
DSI2X55-16A
Features: With its high voltage rating of 1
IXYS
9,640
IXFN360N10T
MOSFET IXFN360N10T: N-channel device designed for high-power applications, supporting up to 100 volts and 360 amps
Littelfuse
8,361
IXFN110N85X
Field-Effect Transistor
IXYS
5,715
IXXN200N60C3H1
IGBT Module N-CH 600V 200A 780000mW
IXYS
6,914
IXYN100N120C3
Trans IGBT Chip N-CH 1200V 152A 830000mW
IXYS
7,697
IXTN60N50L2
N-Channel 500V 53A Chassis Mount Power Transistor with SOT-227B Package
IXYS
5,684
VS-FC420SA10
Discrete Semiconductor Modules 100V 435A Module SOT-227
Vishay
7,489
IXTN170P10P
High-power P-channel MOSFET transistor in a 4-pin SOT-227B package rated for 100 volts and 170 amperes
IXYS
8,406
IXTN320N10T
channel silicon transistor
IXYS
8,318
IXFN110N60P3
With a voltage rating of 600V and a current capacity of 90A, IXFN110N60P3 is an N-channel MOSFET tailored for power applications up to 1
IXYS
5,778
VS-RA160FA120
Rectifier Diode Switching 1.2KV 91A 4-Pin SOT-227
Vishay
7,741
DSS2X61-0045A
A pair of Schottky diodes rated for 2x60 amps and 45 volts, housed in SOT-227B packaging
IXYS
6,130
MMO62-16IO6
The Standard AC Switches series provides breakdown voltages of up to 1800V
IXYS
5,017
IXGN82N120C3H1
IXGN82N120C3H1 is a 1
IXYS
7,079
APT8011JFLL
APT8011JFLL MOSFET with 800V Power and 4-Pin SOT-227 Configuration
Microchip Technology
7,555
IXFN64N50P
The IXFN64N50P is a robust Power Field-Effect Transistor designed for high-current applications, supporting up to 61A and 500V
IXYS
5,789
DSI2X55-12A
Avalanche Rectifier Diode: This component, coded as DSI2X55-12A, operates with a single phase and contains two elements
IXYS
6,918
IXFN210N30X3
High Voltage Transistor
IXYS
7,619
IXFN300N20X3
IXFN300N20X3: N-channel MOSFET rated for 200 volts and 300 amperes, packaged in SOT227B
IXYS
9,327
IXFN240N25X3
Product IXFN240N25X3 is a N Channel MOSFET with specifications including a maximum voltage rating of 250V
IXYS
5,638
MSC040SMA120J
The MSC040SMA120J is a tube-packaged N-channel SiC MOSFET capable of handling up to 1.2KV and 53A, housed in a 4-pin SOT-227 configuration."
Microchip Technology
7,336
MSC025SMA120J
This device is a Power Field-Effect Transistor capable of handling a current up to 77A and operating at a voltage of 1200V
Microchip Technology
6,471
IXFN120N65X2
Details: The IXFN120N65X2 is a MOSFET device featuring an N-Type channel, capable of handling up to 650 Volts and 108 Amperes
IXYS
9,102
IXFN140N30P
High power Single N-Channel Mosfet
IXYS
7,540
IXFN106N20
Discrete Semiconductor Modules IXFN106N20
IXYS
5,908
IXFN32N120
Silicon N-channel Transistor MOSFET with 1.2KV voltage rating, 32A current rating, and 4-pin SOT-227B package
IXYS
7,010
IXTN200N10L2
channel power MOSFET
IXYS
7,699
IXKN40N60C
Miniature Package with Class 3 Junctions
Littelfuse
6,249
IXFN27N80
27A current N-Channel transistor for industrial use
IXYS
8,671
IXFN48N50
Featuring a low on-resistance of just 100mΩ at 10V and 24A
Littelfuse
9,960
