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IXKN45N80C

Power Field-Effect Transistor with 44A I(D)

Inventory:7,727

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  • 365 Days Quality Guarantee
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Overview of IXKN45N80C

Leveraging the latest advancements in MOSFET technology, the IXKN45N80C Power MOSFETs offer unmatched performance with the lowest RDS(on) within the 600V-800V range. The incorporation of internal DCB isolation streamlines the assembly process and minimizes thermal resistance, effectively dissipating heat for enhanced durability. Additionally, these devices are designed to withstand avalanche conditions, ensuring robust operation in challenging scenarios

Key Features

  • Fiber optic communication
  • Data transmission protocol
  • Error correction algorithm

Application

  • Efficient power supplies
  • Reliable UPS systems
  • Improved energy usage
  • Robust welding performance
  • Fast heating capabilities

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series CoolMOS™ Package Tube
Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 44A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 74mOhm @ 44A, 10V Vgs(th) (Max) @ Id 3.9V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 360 nC @ 10 V Vgs (Max) ±20V
Power Dissipation (Max) 380W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Supplier Device Package SOT-227B
Package / Case SOT-227-4, miniBLOC Base Product Number IXKN45

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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