IXFN210N30X3
High Voltage Transistor
Inventory:7,619
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Part Number : IXFN210N30X3
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Package/Case : SOT-227-4
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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Datesheet : IXFN210N30X3 DataSheet (PDF)
Overview of IXFN210N30X3
Featuring low reverse recovery charge and time, the body diodes of the IXFN210N30X3 are designed to efficiently dissipate leftover energies during high-speed switching, reducing the risk of device failure and enhancing overall efficiency. Additionally, these MOSFETs are avalanche capable, offering superior dv/dt performance to withstand voltage spikes and prevent accidental turn-on of parasitic bipolar transistors
Key Features
- High current handling capacity
- Rapid recovery time
- Voltage regulation
- Soft start capability
Application
- Precision voltage regulation
- Flexible design options
- Enhanced efficiency
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Series | HiPerFET™, Ultra X3 | Package | Tube |
| Product Status | Active | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 300 V |
| Current - Continuous Drain (Id) @ 25°C | 210A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 4.6mOhm @ 105A, 10V | Vgs(th) (Max) @ Id | 4.5V @ 8mA |
| Gate Charge (Qg) (Max) @ Vgs | 375 nC @ 10 V | Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 24200 pF @ 25 V | Power Dissipation (Max) | 695W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Chassis Mount |
| Supplier Device Package | SOT-227B | Package / Case | SOT-227-4, miniBLOC |
| Base Product Number | IXFN210 |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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