• IXFN80N50P SOT227-4
IXFN80N50P SOT227-4

IXFN80N50P

MOSFET with a 500V voltage rating and a maximum current capacity of 66A

Inventory:8,515

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Overview of IXFN80N50P

The IXFN80N50P is a high-power MOSFET transistor designed for use in power electronics applications.This MOSFET features a low on-state resistance and high current capability,making it suitable for high-power switching circuits.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • G:Gate
  • D:Drain
  • S:Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXFN80N50P MOSFET for a visual representation.

Key Features

  • High Power Handling Capacity:The IXFN80N50P can handle high power levels,ideal for applications requiring high current switching.
  • Low On-state Resistance:With its low on-state resistance,the MOSFET minimizes power loss and heat generation during operation.
  • Fast Switching Speed:This MOSFET offers fast switching speeds,allowing for efficient switching operations in power circuits.
  • High Voltage Rating:The IXFN80N50P has a high voltage rating,allowing it to withstand high voltage levels in power applications.

Note:For detailed technical specifications,please refer to the IXFN80N50P datasheet.

Application

  • Power Supplies:Suitable for use in power supply circuits to control and switch high currents.
  • Inverters:Commonly used in inverter circuits for converting DC power to AC power in various applications.
  • Motor Drives:Ideal for motor drive applications that require high-power switching capabilities.

Functionality

The IXFN80N50P MOSFET transistor is designed to control high-power loads by effectively switching current on and off,providing robust performance in power electronics applications.

Usage Guide

  • Gate Connection:Connect the gate (G)pin to the driving circuit for controlling the MOSFET's switching operation.
  • Drain Connection:Connect the drain (D)pin to the load that needs to be switched.
  • Source Connection:Connect the source (S)pin to the ground or common reference point.

Frequently Asked Questions

Q:What is the maximum current rating for the IXFN80N50P?
A:The IXFN80N50P has a maximum current rating of 80A.

Q:Can the IXFN80N50P be used for high-frequency switching applications?
A:Yes,the IXFN80N50P is capable of fast switching speeds, making it suitable for high-frequency applications.

Equivalent

For similar functionalities, consider these alternatives to the IXFN80N50P:

  • IRF840:This is a power MOSFET with comparable specifications to the IXFN80N50P, suitable for high-power applications.
  • STP80NF03L:A power MOSFET transistor with similar performance characteristics to the IXFN80N50P, designed for power electronics applications.

IXFN80N50P

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V) 500 Maximum On-Resistance @ 25 ℃ (Ohm) 0.065
Continuous Drain Current @ 25 ℃ (A) 66 Gate Charge (nC) 195
Input Capacitance, CISS (pF) 12700 Thermal resistance [junction-case] (K/W) 0.18
Configuration Single Package Type SOT-227
Power Dissipation (W) 700 Maximum Reverse Recovery (ns) 200
Sample Request Yes Check Stock Yes

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