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IXFN360N10T

MOSFET IXFN360N10T: N-channel device designed for high-power applications, supporting up to 100 volts and 360 amps

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Overview of IXFN360N10T

The IXFN360N10T is a high-power MOSFET transistor designed for use in power electronics applications. It features a voltage rating of 100V and a continuous drain current of 360A, making it suitable for high-current applications. This MOSFET offers low on-state resistance and high switching speed, ideal for power conversion and motor control.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G-S: Gate-Source Connection
  • G-D: Gate-Drain Connection
  • D: Drain Terminal
  • S: Source Terminal
  • VCC: Positive Power Supply
  • GND: Power Ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXFN360N10T MOSFET for a visual representation.

Key Features

  • High Power Capability: The IXFN360N10T can handle high continuous current up to 360A, suitable for power electronics applications.
  • Low On-State Resistance: This MOSFET offers low resistance for efficient power conversion and minimal power loss.
  • Fast Switching Speed: With high switching speed, the IXFN360N10T is suitable for applications requiring rapid switching.
  • High Voltage Rating: Operating at 100V, this MOSFET can withstand high voltage levels in power circuits.
  • Robust Construction: Built with durable materials, the IXFN360N10T ensures reliable performance in demanding environments.

Note: For detailed technical specifications, please refer to the IXFN360N10T datasheet.

Application

  • Power Inverters: Ideal for use in power inverters for converting DC power to AC power in various applications.
  • Motor Drives: Suitable for motor control applications where high-current switching is required.
  • Power Supplies: Used in high-power supply units for efficient power distribution and regulation.

Functionality

The IXFN360N10T MOSFET transistor is designed to handle high-power applications with its high current and voltage ratings. It provides efficient switching and power control capabilities in power electronics systems.

Usage Guide

  • Power Supply: Connect VCC to the positive power supply and GND to the power ground for proper operation.
  • Gate Control: Apply appropriate gate signals to control the switching behavior of the MOSFET.
  • Load Connection: Connect the load between the drain and source terminals for power transmission.

Frequently Asked Questions

Q: What is the maximum continuous current rating of the IXFN360N10T?
A: The IXFN360N10T can handle a continuous current of up to 360A, making it suitable for high-power applications.

Q: Is the IXFN360N10T suitable for automotive applications?
A: Yes, the IXFN360N10T can be used in automotive power systems and motor control applications due to its high-power capabilities and voltage rating.

Equivalent

For similar functionalities, consider these alternatives to the IXFN360N10T:

  • IRF3205: A high-power MOSFET with comparable specifications to the IXFN360N10T, suitable for power electronics and motor control.
  • IXFK120N25: This MOSFET offers high power handling and efficiency similar to the IXFN360N10T, with slight variations in voltage and current ratings.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V) 100 Maximum On-Resistance @ 25 ℃ (Ohm) 0.0026
Continuous Drain Current @ 25 ℃ (A) 360 Gate Charge (nC) 525
Input Capacitance, CISS (pF) 33000 Thermal resistance [junction-case] (K/W) 0.18
Configuration Single Package Type SOT-227
Power Dissipation (W) 830 Sample Request Yes
Check Stock Yes

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