IXFN360N10T
MOSFET IXFN360N10T: N-channel device designed for high-power applications, supporting up to 100 volts and 360 amps
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Part Number : IXFN360N10T
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Package/Case : SOT-227-4
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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Datesheet : IXFN360N10T DataSheet (PDF)
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Series : IXFN360N10
The IXFN360N10T is a high-power MOSFET transistor designed for use in power electronics applications. It features a voltage rating of 100V and a continuous drain current of 360A, making it suitable for high-current applications. This MOSFET offers low on-state resistance and high switching speed, ideal for power conversion and motor control. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the IXFN360N10T MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the IXFN360N10T datasheet. Functionality The IXFN360N10T MOSFET transistor is designed to handle high-power applications with its high current and voltage ratings. It provides efficient switching and power control capabilities in power electronics systems. Usage Guide Q: What is the maximum continuous current rating of the IXFN360N10T? Q: Is the IXFN360N10T suitable for automotive applications? For similar functionalities, consider these alternatives to the IXFN360N10T:Overview of IXFN360N10T
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The IXFN360N10T can handle a continuous current of up to 360A, making it suitable for high-power applications.
A: Yes, the IXFN360N10T can be used in automotive power systems and motor control applications due to its high-power capabilities and voltage rating.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Drain-Source Voltage (V) | 100 | Maximum On-Resistance @ 25 ℃ (Ohm) | 0.0026 |
Continuous Drain Current @ 25 ℃ (A) | 360 | Gate Charge (nC) | 525 |
Input Capacitance, CISS (pF) | 33000 | Thermal resistance [junction-case] (K/W) | 0.18 |
Configuration | Single | Package Type | SOT-227 |
Power Dissipation (W) | 830 | Sample Request | Yes |
Check Stock | Yes |
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