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IXFN32N120

Silicon N-channel Transistor MOSFET with 1.2KV voltage rating, 32A current rating, and 4-pin SOT-227B package

Quantity Unit Price(USD) Ext. Price
1 $41.940 $41.94
200 $16.230 $3,246.00
500 $15.660 $7,830.00
1000 $15.378 $15,378.00

Inventory:7,010

*The price is for reference only.
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Overview of IXFN32N120

Featuring the IXFN32N120 Power MOSFET, the N-Channel HiPerFET™ Standard series delivers top-notch quality and efficiency for demanding applications. These MOSFETs are optimized for both hard switching and resonant mode scenarios, offering low gate charge and robust construction with a rapid intrinsic diode. With a strong emphasis on durability and performance, this series is ideal for industrial applications where reliability is crucial. Furthermore, the availability of various standard industrial packages, including isolated types, enhances the versatility and usability of these Power MOSFETs

Key Features

  • High Power Density Design
  • Improved Thermal Management
  • Fast Switching Speed
  • Avalanche Rated JFET Structure

Application

  • Robust design
  • Long lifespan
  • Versatile functionality

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series HiPerFET™ Package Box
Product Status Not For New Designs FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 32A Rds On (Max) @ Id, Vgs 350mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 400 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 15900 pF @ 25 V Mounting Type Chassis Mount
Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC
Base Product Number IXFN32

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