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IXFN82N60Q3

IXFN82N60Q3 is a power MOSFET designed for N-channel operation

Quantity Unit Price(USD) Ext. Price
1 $54.926 $54.93
200 $21.257 $4,251.40
500 $20.509 $10,254.50
1000 $20.140 $20,140.00

Inventory:8,548

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Overview of IXFN82N60Q3

The IXFN82N60Q3 is a high-power MOSFET transistor designed for applications requiring high current and voltage capabilities. It features a low on-state resistance and high transconductance, making it suitable for power conversion and motor control applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXFN82N60Q3 MOSFET for a visual representation.

Key Features

  • High Power Handling: The IXFN82N60Q3 can handle high power levels, suitable for demanding applications.
  • Low On-State Resistance: With its low Rds(on), this MOSFET minimizes power dissipation and improves efficiency.
  • High Transconductance: The high transconductance ensures effective signal amplification and control.
  • Fast Switching Speed: This MOSFET offers fast switching characteristics for rapid power control.
  • High Voltage Capability: Able to withstand high voltage levels, making it ideal for high-voltage applications.

Note: For detailed technical specifications, please refer to the IXFN82N60Q3 datasheet.

Application

  • Power Inverters: Ideal for use in power inverters and converters for efficient power conversion.
  • Motor Drives: Suitable for motor control applications requiring high current handling capabilities.
  • Switching Circuits: Used in various switching circuits for controlling power flow and voltage levels.

Functionality

The IXFN82N60Q3 MOSFET is designed to efficiently control high power levels with low resistance and high transconductance, making it a reliable component for power electronics applications.

Usage Guide

  • Gate Connection: Connect the gate (G) pin to the control signal for switching the MOSFET.
  • Drain Connection: Connect the drain (D) pin to the load or power supply.
  • Source Connection: Connect the source (S) pin to the ground or return path.

Frequently Asked Questions

Q: Is the IXFN82N60Q3 suitable for high-frequency switching applications?
A: Yes, the IXFN82N60Q3 offers fast switching speeds, making it suitable for high-frequency applications such as SMPS and motor drives.

Equivalent

For similar functionalities, consider these alternatives to the IXFN82N60Q3:

  • IRF840: A power MOSFET with comparable characteristics suitable for high-power applications.
  • FDP8878: This MOSFET offers similar power handling capabilities and efficiency for power electronics designs.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series HiPerFET™, Q3 Class Package Tube
Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 66A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 75mOhm @ 41A, 10V Vgs(th) (Max) @ Id 6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 275 nC @ 10 V Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 13500 pF @ 25 V Power Dissipation (Max) 960W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount
Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC
Base Product Number IXFN82

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