• packageimg
packageimg

IXFN27N80

27A current N-Channel transistor for industrial use

Quantity Unit Price(USD) Ext. Price
1 $75.322 $75.32
200 $30.055 $6,011.00
500 $29.050 $14,525.00
1000 $28.553 $28,553.00

Inventory:8,671

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for IXFN27N80 using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of IXFN27N80

Unleash the full potential of your power systems with the IXFN27N80, the ultimate N-Channel HiPerFET™ Standard series Power MOSFET. Engineered for excellence in performance and durability, this Power MOSFET features a low gate charge and superior ruggedness, making it ideal for a wide range of industrial applications. With its fast intrinsic diode and availability in various standard industrial packages, including isolated types, the IXFN27N80 offers unmatched efficiency and reliability for your power management needs. Invest in the IXFN27N80 and take your power systems to the next level

Key Features

  • Superior Thermal Characteristics
  • Excellent Transient Response
  • Rapid Diode Turn-On Time
  • High Current Capable

Application

  • Enhanced power management
  • Optimal performance
  • Easy integration

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series HiPerFET™ Package Tube
Product Status Not For New Designs FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 27A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V, 15V
Rds On (Max) @ Id, Vgs 300mOhm @ 13.5A, 10V Vgs(th) (Max) @ Id 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 400 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9740 pF @ 25 V Power Dissipation (Max) 520W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount
Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC
Base Product Number IXFN27

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

IRF7201TRPBF

IRF7201TRPBF

IRF7201TRPBF is a robust N-channel power MOSFET engineered to deliver reliable performance in circuits operating between 12V and 300V
2N4250A

2N4250A

2N4250A Central Semiconductor specifications
IRF7413PBF

IRF7413PBF

Channel MOSFET Transistor in SO package
NVTFS5C658NLWFTAG

NVTFS5C658NLWFTAG

Transistor AFSM T6 60V Low Leakage Ultra-Flat Package, White
APT65GP60L2DQ2G

APT65GP60L2DQ2G

Advanced IGBT Technology
SGP30N60HS

SGP30N60HS

Fast-switching IGBT transistors rated at 600V and 30A, employing NPT technology
MMBT6429LT1G

MMBT6429LT1G

The MMBT6429L is categorized as a small signal NPN general purpose transistor
IRG4PF50WDPBF

IRG4PF50WDPBF

51A Collector Current
IRGB30B60KPBF

IRGB30B60KPBF

Infineon IRGB30B60KPBF IGBT has a current rating of 78A and voltage rating of 600V in TO-220AB package
SI4848DY-T1-E3

SI4848DY-T1-E3

SI4848DY-T1-E3 150V 15NC 2.5/RL