• packageimg
packageimg

VS-FC420SA10

Discrete Semiconductor Modules 100V 435A Module SOT-227

Inventory:7,489

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for VS-FC420SA10 using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of VS-FC420SA10

N-Channel 100 V 435A (Tc) 652W (Tc) Chassis Mount SOT-227

Key Features

  • Avalanche energy rated
  • Reduced conduction losses
  • UL certified E79...

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer Vishay Product Category Discrete Semiconductor Modules
RoHS Details Product Power MOSFET Modules
Type MOSFET Technology Si
Vf - Forward Voltage 910 mV Vr - Reverse Voltage 100 V
Vgs - Gate-Source Voltage - 20 V, + 20 V Mounting Style Screw Mounts
Package / Case SOT-227-4 Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Brand Vishay Semiconductors
Configuration Single Fall Time 172 ns
Id - Continuous Drain Current 435 A Number of Channels 1 Channel
Pd - Power Dissipation 652 W Product Type Discrete Semiconductor Modules
Rds On - Drain-Source Resistance 2.15 mOhms Rise Time 275 ns
Factory Pack Quantity 10 Subcategory Discrete Semiconductor Modules
Transistor Polarity N-Channel Typical Turn-Off Delay Time 152 ns
Typical Turn-On Delay Time 45 ns Vds - Drain-Source Breakdown Voltage 100 V
Vgs th - Gate-Source Threshold Voltage 2.2 V Unit Weight 1.058219 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

IRFR9220PBF

IRFR9220PBF

Unipolar P-MOSFET transistor designed to operate at -200 volts and -2
NJVNJD35N04T4G

NJVNJD35N04T4G

350V NPN Darlington Transistors, 2000@2V, 2A, 4A 45W DPAK
MUN5235DW1T1G

MUN5235DW1T1G

Transistor Digital NPN 50V 100mA 385mW 6-Pin SC-88 T/R
IPN70R1K5CEATMA1

IPN70R1K5CEATMA1

N Channel MOSFETs ROHS 700V 5.4A 1.5Ω@1A
STGB3NC120HDT4

STGB3NC120HDT4

N-channel IGBT chip designed for high-voltage operations, capable of handling up to 1200V and 14A
IHCS22R60CE

IHCS22R60CE

Phase Switched Reluctance for Power Applications
SI7121DN-T1-GE3

SI7121DN-T1-GE3

16 Amp 30 Volt P-Channel Power MOSFET in an 8-Pin PowerPAK 1212 EP package on reel
SI7623DN-T1-GE3

SI7623DN-T1-GE3

P-channel 20V 35A Power MOSFET in 8-pin PowerPAK 1212 package, tape and reel
DMP2240UDM-7

DMP2240UDM-7

Power dissipation of 600mW at 1V, 250uA
BUZ100S

BUZ100S

BUZ100S is a power MOSFET of N-channel type, made of silicon, capable of handling a current up to 77A and a voltage up to 55V