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IXFN48N50

Featuring a low on-resistance of just 100mΩ at 10V and 24A

Quantity Unit Price(USD) Ext. Price
1 $27.618 $27.62
30 $26.700 $801.00

Inventory:9,960

*The price is for reference only.
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Overview of IXFN48N50

The IXFN48N50 is a power MOSFET transistor designed for high-speed, high-voltage switching applications. It features a voltage rating of 500V and a continuous drain current of 48A, making it suitable for various power control and conversion applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • V: Substrate

Circuit Diagram

Include a circuit diagram representing the connections and operation of the IXFN48N50 MOSFET for visual reference.

Key Features

  • High Voltage Rating: With a voltage rating of 500V, the IXFN48N50 is suitable for high-voltage applications.
  • High Current Capability: The MOSFET can handle a continuous drain current of 48A, making it suitable for high-power applications.
  • Fast Switching Speed: This power transistor offers high-speed switching for efficient power control.
  • Low ON-Resistance: The low ON-resistance of the IXFN48N50 reduces power dissipation and improves efficiency.
  • Temperature Stability: The transistor's performance is stable over a wide temperature range, ensuring reliable operation in various conditions.

Note: For detailed technical specifications, please refer to the IXFN48N50 datasheet.

Application

  • Switching Power Supplies: Ideal for use in high-voltage, high-power switching power supply designs.
  • Motor Control: Suitable for motor drive and control applications requiring high current handling capabilities.
  • Industrial Inverters: Used in industrial inverter and converter systems for efficient power conversion.

Functionality

The IXFN48N50 power MOSFET is designed for high-speed, high-voltage switching applications, providing efficient power control and conversion for various industrial and electronic systems.

Usage Guide

  • Gate Drive: Apply the appropriate gate drive voltage to turn the MOSFET on and off effectively.
  • Heat Management: Ensure proper heat sinking and thermal management to maintain safe operating temperatures.
  • Current Handling: Consider the current requirements of the application to prevent exceeding the MOSFET's rated current.

Frequently Asked Questions

Q: What is the maximum voltage rating of the IXFN48N50?
A: The IXFN48N50 has a maximum voltage rating of 500V, making it suitable for high-voltage applications.

Q: Can the IXFN48N50 be used for motor control in automotive applications?
A: Yes, the high current capability of the IXFN48N50 makes it suitable for motor control applications, including automotive systems.

Equivalent

For similar functionalities, consider these alternatives to the IXFN48N50:

  • IRF540N: A power MOSFET with similar voltage and current ratings, suitable for power switching applications.
  • FDP8878: This MOSFET offers comparable performance and characteristics to the IXFN48N50 for high-power switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V) 500 Maximum On-Resistance @ 25 ℃ (Ohm) 0.1
Continuous Drain Current @ 25 ℃ (A) 48 Gate Charge (nC) 270
Input Capacitance, CISS (pF) 8400 Thermal resistance [junction-case] (K/W) 0.24
Configuration Single Package Type SOT-227
Power Dissipation (W) 521 Maximum Reverse Recovery (ns) 250
Sample Request No

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