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IXFN110N85X

Field-Effect Transistor

Quantity Unit Price(USD) Ext. Price
1 $59.527 $59.53
200 $23.036 $4,607.20
500 $22.226 $11,113.00
1000 $21.826 $21,826.00

Inventory:5,715

*The price is for reference only.
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Overview of IXFN110N85X

The IXFN110N85X Ultra-Junction X-Class Power MOSFETs are a game-changer in the realm of high-voltage power conversion. With the lowest on-state resistances in the industry, these rugged devices allow for exceptional power density in a variety of applications. Through innovative technology and a focus on performance, these MOSFETs deliver low gate charges and superior dv/dt characteristics, setting them apart from the competition. The fast soft-recovery body diode further enhances their efficiency by reducing switching losses and minimizing electromagnetic interference

Key Features

  • Robust construction
  • Low leakage current
  • High current density
  • Space-saving layout

Application

  • High voltage inverters
  • Battery equalizers
  • Frequency converters

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series HiPerFET™, Ultra X Package Tube
Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 850 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 33mOhm @ 55A, 10V Vgs(th) (Max) @ Id 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 425 nC @ 10 V Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 17000 pF @ 25 V Power Dissipation (Max) 1170W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount
Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC
Base Product Number IXFN110

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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