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IXTN170P10P

High-power P-channel MOSFET transistor in a 4-pin SOT-227B package rated for 100 volts and 170 amperes

Inventory:8,406

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Overview of IXTN170P10P

Leveraging our state-of-the-art Polar technology platform, the IXTN170P10P Polar™ P-Channel MOSFETs deliver unparalleled performance and efficiency, with a 30% reduction in on-state resistance (RDSon) and a 40% decrease in gate charge (Qg) when compared to conventional alternatives. This significant improvement translates to lower conduction loss and superior switching characteristics, empowering applications to operate at their best. Furthermore, these MOSFETs are engineered to withstand even the most demanding environments, boasting dynamic dv/dt and avalanche ratings for exceptional ruggedness and reliability, while their positive temperature coefficient on-state resistance facilitates easy paralleling

Key Features

  • Fast switching time results in high efficiency
  • High voltage tolerance
  • Low power consumption

Application

  • Surge suppressors
  • Frequency inverters
  • Power factor correction

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series Polar Package Tube
Product Status Active FET Type P-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 170A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 240 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 12600 pF @ 25 V Power Dissipation (Max) 890W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount
Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC
Base Product Number IXTN170

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    Parts Quality Guarantee: 365 days

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