IXTN21N100
Discrete Semiconductor Modules with 21 Amps and 100V rating, featuring a low resistance of 0.55 Ohm
Inventory:7,113
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Part Number : IXTN21N100
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Package/Case : SOT-227-4
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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Datesheet : IXTN21N100 DataSheet (PDF)
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Series : IXTN21N100
Overview of IXTN21N100
N-Channel 1000 V 21A (Tc) 520W (Tc) Chassis Mount SOT-227B
Key Features
- International standard packages
- JEDECTO-264,epoxymeetUL94V-0 flammability classification
- miniBLOC,(ISOTOP-compatible) with Aluminium nitride isolation
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Low package inductance
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Category | Discrete Semiconductor Modules | RoHS | Details |
| Technology | Si | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Mounting Style | Chassis Mount | Package / Case | SOT-227-4 |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Series | IXTN21N100 | Brand | IXYS |
| Configuration | Single | Fall Time | 40 ns |
| Height | 9.6 mm | Id - Continuous Drain Current | 21 A |
| Length | 38.23 mm | Number of Channels | 1 Channel |
| Pd - Power Dissipation | 520 W | Product Type | Discrete Semiconductor Modules |
| Rds On - Drain-Source Resistance | 550 mOhms | Rise Time | 50 ns |
| Factory Pack Quantity | 10 | Subcategory | Discrete Semiconductor Modules |
| Transistor Polarity | N-Channel | Typical Turn-Off Delay Time | 100 ns |
| Typical Turn-On Delay Time | 30 ns | Vds - Drain-Source Breakdown Voltage | 1 kV |
| Width | 25.42 mm | Unit Weight | 1.058219 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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