APT2X30D100J
1KV 28A Diode Switching 4-Pin SOT-227 Rail/Tube
Microchip Technology
9,569
APT10M07JVFR
APT10M07JVFR Discrete Semiconductor Module: Leveraging FREDFET MOS5 technology
Microchip Technology
7,589
APL502J
500V MOSFET Discrete Semiconductor Modules FG, 0.12_OHM
Microchip Technology
7,506
APT77N60JC3
Product APT77N60JC3 is a discrete semiconductor module with a description indicating it's an FG MOSFET
Microchip Technology
5,197
APT34M120J
A silicon N-channel MOSFET rated for 1.2 kilovolts with a current capacity of 35 amperes, packaged in a 4-pin SOT-227 tube
Microchip Technology
8,480
APT50M85JVR
APT50M85JVR is a discrete semiconductor module with MOSFET MOS5 technology
Microchip Technology
8,609
GA200SA60S
Bus Switch Dual 24TSSOP IC FET
Vishay
9,866
APT60GT60JRD
IGBT Modules FG
Microchip
8,666
APT12040JVR
Featuring a voltage rating of 1
Microchip
8,398
MS0690J-DL1TE
SCR Module Diode rated for 600V, 90A (RMS), with Surge Capacity up to 950A, Packaged in a 4-Pin SOT-227B Tube
Littelfuse Inc.
9,485
IXFN120N20
quality SOT-227B MOSFETs ROHS
Littelfuse
5,350
IXFN48N50Q
Discrete Semiconductor Modules rated at 48 Amps, 500V and 0.1 Rds
Littelfuse
7,794
IXFN400N15X3
IXFN400N15X3: SOT-227B MOSFETs ROHS compliant
IXYS
5,646
IXFN170N65X2
N-Channel 650 V 170 A 1170 W Chassis Mount X2-Class HiPerFETTM Mosfet - SOT-227B
IXYS
9,421
APT2X61S20J
Diode Schottky 200V 75A 4-Pin SOT-227 Tube
Microchip Technology
5,952
APT20M11JLL
Module APT20M11JLL: Single Transistor Unit with 200V Capacity, ISOTOP Design, Screw Fastening, Max Current Handling of 704A
Microchip Technology
8,904
APT20M11JVR
Maximum power dissipation of 700W
Microchip Technology
6,396
APT20M22JVR
Product description: MOSFET with 200V voltage rating and 22mOhm resistance in SOT-227 package
Microchip Technology
9,948
APT41F100J
FREDFET MOS8 1000 V 41 A SOT-227 Discrete Semiconductor Modules
Microchip Technology
7,482
APT80SM120J
APT80SM120J MOSFET, employing Silicon Carbide, excels in power management tasks
Microsemi Corporation
6,912
APT50MC120JCU2
High-performance power module for boost chopper systems
Microchip Technology
6,817
APT40SM120J
4-Pin SOT-227 Silicon Carbide Power MOSFET 32A 1200V
Microsemi Corporation
9,082
G3R20MT17N
N-type silicon carbide metal-oxide-semiconductor field-effect transistor with a current rating of 100A in SOT227 housing
GeneSiC Semiconductor
5,561
VS-FB180SA10P
SOT-227 Packaged N-Channel MOSFET Suitable for High-Power Switching, Rated at 100V Voltage and 180A Continuous Current, Equipped with Four Pins
Vishay General Semiconductor - Diodes Division
9,688
IXUN350N10
Discrete Semiconductor Modules - IXUN350N10: Capable of Handling 350 Amps with a 10V Rating
IXYS
9,217
IXFN80N50Q2
Discrete semiconductor module rated for 80 Amps and 500V with 0.06 Rds
IXYS
5,893
HFA120FA60
Product Name: HFA120FA60 Rectifiers - 600V, 60A, HEXFRED Technology, SOT-227 Package
Vishay General Semiconductor - Diodes Division
7,085
FB180SA10
Power MOSFET Module with 100V Voltage Rating
Vishay General Semiconductor - Diodes Division
7,284
FA38SA50LC
Single N-Channel HEXFET Power MOSFET with 500V Rating
Vishay General Semiconductor - Diodes Division
6,337
DSEP2X31-06A
SOT-227-4 Diode Array featuring 2 Independent circuits, designed for chassis mounting with a high rating of 600V and 30A
IXYS
6,938
DSEP2X25-12C
200 Vrrm 2 X 25 A 4.7 Vf Epitaxial Diode - SOT-227 B
IXYS
5,171
APT8030JVFR
APT8030JVFR - SOT-227 Discrete Semiconductor Module with FREDFET MOSFET 800V and 30 Ohm
Microchip Technology
7,709
APT2X61DC120J
Power Module with SiC Rectifiers
Microchip Technology
7,443
APT10025JVR
APT10025JVR is a N-channel MOSFET transistor designed for high voltage applications
Microchip
5,778
APT10021JLL
MOSFET designed for rail or tube mounting
Microchip Technology
5,433
APT30DF60HJ
APT30DF60HJ: Bridge Rectifiers with PM-DIODE-FRED-D-SOT227
Microchip Technology
7,224
APT10025JVFR
High-power FREDFET component
Microchip Technology
8,486
APT60DF60HJ
SOT-227 Tube Diode Rectifier Bridge rated at 600V and 90A
Microchip Technology
5,744
APT40DR160HJ
1.6KV 40A Single Diode Rectifier Bridge in 4-Pin SOT-227 Tube
Microchip Technology
6,808
APT53F80J
N-channel 800V 57A Power MOSFET in SOT-227 Package
Microchip Technology
7,447
APT60M60JLL
SOT-227 packaged N-channel 600V 70A MOSFET
Microchip Technology
5,284
APT5012JN
APT5012JN by Microchip Technology - Description
Microsemi Corporation
5,846
APT40N60JCU2
High-performance APT40N60JCU2 ensures efficient energy conversion with reduced losses
Microchip Technology
7,694
VS-GA200SA60SP
High-performance IGBT module optimized for N-channel operation at 600V, 342A, and a power dissipation of 781000mW
Vishay General Semiconductor - Diodes Division
9,615
VS-GT175DA120U
Module Trans IGBT N-CH 1200V 288A 1087000mW
Vishay General Semiconductor - Diodes Division
7,883
IXGN400N60A3
600V N-Channel IGBT Transistor Module
IXYS
9,013
IXA70R1200NA
High Gain Bipolar MOS Transistor Integrated in High Voltage IGBT Module
IXYS
8,202
IXXN100N60B3H1
IGBT Transistors XPT 600V with Diode
IXYS
9,577
IXSN80N60AU1
Reach us for further information
IXYS
9,348
GA200SA60SP
GA200SA60SP: Transistor IGBT Module, N-Channel, 600V, 342A, 781,000mW
vishay
8,452
