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IXFN110N60P3

With a voltage rating of 600V and a current capacity of 90A, IXFN110N60P3 is an N-channel MOSFET tailored for power applications up to 1

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Overview of IXFN110N60P3

Introducing the IXFN110N60P3 PolarP3™ HiPerFET™, the cutting-edge addition to our Polar-Series product portfolio designed for applications requiring voltages between 300V and 600V. These high-performance FETs excel in terms of their Figure of Merit (FOM), which considers the multiplication of Qg and Rdson to provide an unmatched performance compared to conventional super junction technologies. By incorporating advanced technology, this HiPerFET offers impressive benefits, including a 12 percent decrease in on-state resistance (Rdson), a 14 percent reduction in gate charge (Qg), and a remarkable 20 percent increase in maximum power dissipation (Pd). Moreover, the reduced chip thicknesses contribute to lower thermal resistances, enhancing the overall power density of the device

Key Features

  • High isolation voltage
  • Wide operating temperature range
  • Excellent thermal performance
  • Suitable for automotive use

Application

  • Industrial power solutions
  • Robust motor drives
  • Reliable welding gear

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series HiPerFET™, Polar3™ Package Tube
Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 56mOhm @ 55A, 10V Vgs(th) (Max) @ Id 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 245 nC @ 10 V Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 18000 pF @ 25 V Power Dissipation (Max) 1500W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount
Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC
Base Product Number IXFN110

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