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MSC025SMA120J

This device is a Power Field-Effect Transistor capable of handling a current up to 77A and operating at a voltage of 1200V

Inventory:6,471

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Overview of MSC025SMA120J

Microchip's MSC025SMA120J is a revolutionary SiC MOSFET device that provides high performance, efficiency, and reliability for a wide range of applications. With a focus on maximizing system efficiency and reducing weight and size, this device is the perfect solution for projects requiring optimal performance. Microchip's SiC technology offers proven reliability, ensuring that the MSC025SMA120J will continue to deliver top-tier performance over the lifespan of the equipment. Choose Microchip's MSC025SMA120J for dependable performance and peace of mind in all your projects

Key Features

  • High power density
  • Fast switching speed
  • Low thermal noise
  • Voltage surge protection

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Package Tube Product Status Active
FET Type N-Channel Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V Current - Continuous Drain (Id) @ 25°C 77A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V Rds On (Max) @ Id, Vgs 31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs 232 nC @ 20 V
Vgs (Max) +25V, -10V Input Capacitance (Ciss) (Max) @ Vds 3020 pF @ 1000 V
Power Dissipation (Max) 278W (Tc) Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Chassis Mount Supplier Device Package SOT-227 (ISOTOP®)
Package / Case SOT-227-4, miniBLOC Base Product Number MSC025

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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