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IXFN120N65X2

Details: The IXFN120N65X2 is a MOSFET device featuring an N-Type channel, capable of handling up to 650 Volts and 108 Amperes

Inventory:9,102

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  • 365 Days Quality Guarantee
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Overview of IXFN120N65X2

The IXFN120N65X2 product represents a revolutionary leap in MOSFET technology, showcasing unparalleled performance attributes. By harnessing the power of the charge compensation principle and proprietary process technology, these devices offer industry-leading on-state resistances, low gate charges, and exceptional dv/dt performance. Their rugged avalanche capability ensures reliability in harsh operating conditions, while the fast soft-recovery body diode minimizes switching losses and mitigates electromagnetic interference, enhancing overall efficiency and performance

Key Features

  • High power handling capacity
  • Wide input voltage range
  • High efficiency and reliability
  • Safe and secure switching

Application

  • Cutting-edge energy inverters
  • Intelligent PFC circuits
  • Dynamic servo control

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series HiPerFET™, Ultra X2 Package Tube
Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 108A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 54A, 10V Vgs(th) (Max) @ Id 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 225 nC @ 10 V Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 15500 pF @ 25 V Power Dissipation (Max) 890W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount
Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC
Base Product Number IXFN120

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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