APT60GF120JRD
Low Frequency Combi IGBT NPT Transistors, 1200 Volts at 60 Amps with SOT-227 Package
Microchip Technology
8,346
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VS-UFB200FA40P
Rectifier diode switching 202A
Vishay General Semiconductor - Diodes Division
8,788
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GA100NA60U
GA100NA60U: IGBT Transistors Engineered for High-Side Chopper Operations at Ultrafast Frequencies (8-60kHz)
vishay
8,697
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APT100MC120JCU2
1.2KV 143A N-Channel Silicon Carbide Power MOSFET in SOT-227 Package
Microchip Technology
6,440
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APT60M75JVR
APT60M75JVR MOSFET boasts a power handling capacity of 700W at 10V and exhibits a low gate threshold voltage of 4V at 5mA
Microchip Technology
8,543
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GB75DA120UP
Insulated Gate Bipolar Transistor with N-Channel and ROHS Compliant Package-4
vishay
8,709
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IXYN50N170CV1
880W power IGBTs with 120A current capacity
IXYS
7,855
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IXGN200N170
RoHS compliant 1.7kV IGBT
IXYS
9,859
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IXFN70N120SK
Field-effect transistor for power applications
IXYS
5,238
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IXFN50N120SK
Lead-free MOSFETs in SOT-227B package
IXYS
5,266
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GB2X100MPS12-227
silicon carbide power
GeneSiC Semiconductor
8,197
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DCG45X1200NA
DCG45X1200NA Diode
IXYS
7,068
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DCG130X1200NA
112A Schottky Diode
IXYS
6,242
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DCG100X1200NA
2 Element Diode for Rectification
IXYS
8,966
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VS-GT180DA120U
Its rugged construction and reliable performance ensure long-term operation in harsh environments and demanding industrial setting
Vishay General Semiconductor - Diodes Division
8,027
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VS-GT100DA120UF
Insulated Gate Bipolar Transistor module rated for 1200 volts and 187 amps, delivering 890 watts in SOT227 configuration
Vishay
5,252
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APT20M11JFLL
200V 176A 11mΩ@88A, 10V 5V@5mA N Channel SOT-227B-4 MOSFETs ROHS
Microchip Technology
8,558
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APT5010JFLL
N-Channel 500V 41A Trans MOSFET SOT-227
Microchip Technology
8,637
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G3R20MT12N
Silicon Carbide MOSFET N Channel Enhancement Mode
GeneSiC Semiconductor
6,500
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FA57SA50LC
FA57SA50LC N-Channel MOSFET Transistor, 5.7 A, 500 V, 4-Pin SOT-227 Vishay
Vishay General Semiconductor - Diodes Division
9,434
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APT50M65JFLL
CH 500V 58A 4-Pin SOT-227 Tube
Microchip
9,881
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HGT1N40N60A4D
Contact for details
onsemi
5,238
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APT75GP120J
1200V N-Channel IGBT Transistor Module
Microchip
9,472
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VS-UFB200FA20P
Vishay VS-UFB200FA20P, Dual Diode Module, Isolated, 200V 120A, 45ns, 4-Pin SOT-227
Vishay General Semiconductor - Diodes Division
9,613
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VBO40-12NO6
VBO40 Series 1200 Vrrm 40 A 1.15 Vf Single Phase Rectifier Bridge - SOT-227B
IXYS
8,363
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TGHGCR0005FE
Current Sense Resistors - Through Hole .0005ohm 100watt 1% High Power
Ohmite
6,749
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GA100NA60UP
IGBTs rated at 600V and 50A
Vishay
9,427
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DBA200UA60
Independent Channels for 600 V 100A Applications
Sanrex
6,605
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DSEP2X91-03A
Rectifier Diode Switching 300V 90A 40ns 4-Pin SOT-227B Tube
IXYS
8,244
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DSEP2X61-12A
Rectifier Diode Switching 1.2KV 60A 85ns 4-Pin SOT-227B Tube
IXYS
6,141
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DSEP2X61-03A
Rectifier Diode Switching 300V 60A 40ns 4-Pin SOT-227B Tube
IXYS
7,642
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IXFN240N15T2
High-performance GigaMOS Trench T2 HiperFET
Ixys
7,721
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IXFN21N100Q
IXFN21N100Q is a discrete semiconductor module that can handle currents up to 21 Amps and voltages up to 1000V, with a Rds of 0.5
Littelfuse
3,122
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IXFN80N50
MOSFETs IXFN80N50 SOT-227B ROHS
Littelfuse
7,937
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APT2X61DQ100J
SOT-227 4-Pin Diode Switching 1KV 60A
Microchip
3,491
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TGHGCR1000FE
Precise control and monitoring of power flow with minimal losse
Ohmite
7,280
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TGHGCR0100FE
High-precision resistor for critical circuit applications
Ohmite
3,426
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TGHGCR0200FE
Robust design withstands high temperatures and vibration
Ohmite
6,297
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TGHGCR0020FE
Accurate and reliable power monitorin
Ohmite
5,723
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TGHGCR0010FE
Ultra-high precision current sense resistors, ideal for high-power applications
Ohmite
7,202
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