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IXFN140N30P

High power Single N-Channel Mosfet

Inventory:7,540

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
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Overview of IXFN140N30P

With a fast switching speed and low gate charge, the IXFN140N30P is well-suited for high-frequency switching applications where rapid response times are crucial. Its TO-268 package offers excellent thermal conductivity and heat dissipation properties, allowing the transistor to operate at high power levels while maintaining optimal reliability and performance over extended periods. This makes it an ideal choice for applications requiring both high power handling capabilities and precision control

Key Features

  • Fast Recovery Diode
  • Low Leakage Currents
  • Epoxy Free Construction
  • Pulse Width Modulation Compatible

Application

  • Flexible DC-DC converters
  • Advanced power management
  • Efficient motor drives

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series HiPerFET™, Polar Package Tube
Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 300 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 70A, 10V Vgs(th) (Max) @ Id 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 185 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 14800 pF @ 25 V Power Dissipation (Max) 700W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount
Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC
Base Product Number IXFN140

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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