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IXFN106N20

Discrete Semiconductor Modules IXFN106N20

Quantity Unit Price(USD) Ext. Price
1 $59.494 $59.49
200 $23.738 $4,747.60
500 $22.946 $11,473.00
1000 $22.553 $22,553.00

Inventory:5,908

*The price is for reference only.
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Overview of IXFN106N20

The N-Channel HiPerFET™ Standard series, featuring product IXFN106N20, stands out as a premier selection for Power MOSFETs that excel in both hard switching and resonant mode operations. These MOSFETs offer a winning combination of low gate charge, superior ruggedness, and a high-speed intrinsic diode, ensuring optimal performance in a variety of industrial applications. Furthermore, the availability of standard industrial packages, including isolated types, underscores the adaptability and convenience of incorporating these MOSFETs into different projects and systems with ease

Key Features

  • Multiple Safety Features
  • Low ESR Capacitors
  • High Power Handling
  • Fast Response Time
  • Avalanche Rated Diodes

Application

  • Robust design
  • Excellent thermal characteristics
  • Low noise operation

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series HiPerFET™ Package Tube
Product Status Not For New Designs FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 106A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 380 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9000 pF @ 25 V Power Dissipation (Max) 521W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount
Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC
Base Product Number IXFN106

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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