BSM400GA120DN2

Inventory：7,891

Infineon Technologies

IGBT Modules with a voltage of 1200V and current rating of 400A

CM200DY-24NF

Inventory：9,966

Mitsubishi Electric

N-Channel 1200V 200A

APT60GF120JRD

Inventory：8,346

Microchip Technology

Low Frequency Combi IGBT NPT Transistors, 1200 Volts at 60 Amps with SOT-227 Package

F4-75R06W1E3

Inventory：6,103

Infineon Technologies

Electronic component for electrical systems

F4-75R12KS4

Inventory：9,399

Infineon

F4-75R12KS4 also comes in a PressFIT mounting variation

FD200R12KE3

Inventory：8,941

Infineon Technologies

Trans IGBT Module

FF1400R17IP4

Inventory：9,623

Infineon

1700V N-Channel Trans IGBT Module with 1.4KA

FF150R12KE3G

Inventory：8,543

Infineon Technologies

IGBT Modules 1200V 150A DUAL

FF400R33KF2C

Inventory：8,078

Infineon Technologies

3300V N-channel IGBT Module with 660A current rating, ideal for high power applications

BSM75GD120DLC

Inventory：8,053

Infineon Technologies

IGBT Module N-CH 1200V 125A 500W 19-Pin ECONO3-1

FF450R06ME3

Inventory：8,167

Infineon Technologies

An IGBT Transistor Module that features an N-channel, rated for 600V and 550A, with a power dissipation of 1250mW

FF600R12IE4

Inventory：8,158

Infineon Technologies

Module Transistor IGBT N-Channel 1200V 600A 3350mW 8-Pin PRIME2-1 Tray

FF900R12IE4

Inventory：9,542

Infineon Technologies

Transistor IGBT module for N-Channel operation, capable of handling 1.2KV voltage and 900A current, featuring 10-pin PRIME2-1 design

FZ1200R33KF2C

Inventory：8,322

Infineon Technologies

3300V 2KA 14500W

FZ1500R33HE3

Inventory：5,363

Infineon Technologies

IGBT Modules with 3300V and 1500A capacity

IXA60IF1200NA

Inventory：8,427

Ixys

IGBT N-channel 1200V 88A XPT SOT227B

IXYN100N120C3H1

Inventory：6,835

Ixys Integrated Circuits Division

High Power N-Channel IGBT Chip with 1200V 140A Rating

CM300DU-12NFH

Inventory：5,804

Mitsubishi Materials U.S.A. Corporation

Product code: CM300DU-12NFH

DDB6U84N16RR

Inventory：6,960

Infineon Technologies

1600V 85A Discrete Semiconductor Modules UN-CNTL

BSM15GD120DN2E3224

Inventory：7,083

Infineon

ECONOPACK-17 Insulated Gate Bipolar Transistor capable of 25A I(C) and 1200V V(BR)CES in N-Channel

BSM75GB60DLC

Inventory：9,644

Infineon

Dual IGBT Modules with a maximum voltage of 600V and current rating of 75A

BSM35GB120DN2

Inventory：8,815

Infineon

Insulated Gate Bipolar Transistor rated for 35A current and 1200V breakdown voltage, optimized for N-Channel operation in a MODULE-7 housing

BSM15GP60

Inventory：7,931

Infineon Technologies

The BSM15GP60 module is a high-performance IGBT solution with a voltage rating of 600V and a current handling capability of 15A

BSM200GB120DN2

Inventory：5,146

Infineon

Dual IGBT Modules with 1200V and 200A rating

BSM100GD120DLC

Inventory：5,305

Infineon Technologies

N-Channel ECONO 3 with 39 PIN

BSM50GD60DLC

Inventory：7,017

Infineon Technologies

Inquire for more information

BSM35GP120G

Inventory：8,418

Infineon Technologies

Power insulated gate bipolar transistor modules with 1200V and 35A ratings

BSM50GB120DLC

Inventory：8,686

Infineon Technologies

BSM50GB120DLC IGBT featuring 115A I(C) and 1200V V(BR)CES

BSM50GP60G

Inventory：5,302

Infineon Technologies

Insulated Gate Bipolar Transistor

BSM50GAL120DN2

Inventory：6,169

Infineon Technologies

Power module manufactured by Infineon, model BSM50GAL120DN2

BSM100GP60

Inventory：6,623

Infineon Technologies

With a 600V voltage threshold and 100A current handling capacity, BSM100GP60 stands out as a reliable choice for PIM IGBT modules

BSM75GP60

Inventory：7,358

Infineon Technologies

Insulated Gate Bipolar Transistor

BSM200GD60DLC

Inventory：9,901

Infineon

ECONO Insulated Gate Bipolar Transistor, 226A I(C), 600V V(BR)CES, N-Channel, 39 PIN"

BSM200GA170DLC

Inventory：9,598

Infineon Technologies

This module-4 IGBT, BSM200GA170DLC, is designed for high power applications with a 400A current capability and 1700V voltage rating

BSM150GD60DLC

Inventory：5,918

Infineon Technologies

IGBT modules capable of handling 150A current in three-phase systems at 600V

BSM75GAR120DN2

Inventory：5,972

Infineon Technologies

N-Channel IGBT rated at 75A and 1200V Breakdown Voltage

BSM100GD60DLC

Inventory：6,675

Infineon Technologies

Three-phase 600V 100A IGBT modules

BSM25GB120DN2

Inventory：9,460

Infineon Technologies

Inquire for additional details

BSM50GD120DLC

Inventory：7,491

Infineon Technologies

Three-phase IGBT module with a rating of 1200V and 50A

BSM100GB120DLC

Inventory：6,390

Infineon Technologies

BSM100GB120DLC is a dual IGBT module with a voltage rating of 1200V and a current rating of 100A

BSM50GD170DL

Inventory：8,240

Infineon Technologies

Communicate with us for additional information

BSM10GP60

Inventory：9,454

Infineon Technologies

Insulated Gate Bipolar Transistor with a current rating of 20A and a voltage rating of 600V

BSM50GD120DN2G

Inventory：8,523

Infineon

High-Voltage IGBT Modules Suitable for Three-Phase Applications

BSM100GAL120DLCK

Inventory：6,578

Infineon Technologies

Insulated Gate Bipolar Transistor with a maximum collector current of 205A and a breakdown voltage of 1200V

BSM100GB170DLC

Inventory：6,844

Infineon Technologies

N-Channel Insulated Gate Bipolar Transistor with 200A Current Rating and 1700V Voltage Rating, Packaged in Module-7

BSM300GA120DLC

Inventory：8,551

Infineon Technologies

MODULE-5 POWER SEMICONDUCTOR DEVICE

BSM75GD60DLC

Inventory：5,240

Infineon Technologies

600V IGBT Modules with a current rating of 75A

IXGM40N60A

Inventory：7,936

Ixys Corporation

IGBT Chip N-Type 600V 75A 250W Transistor TO-204AE 3-Pin (2+Tab)

IXGN320N60A3

Inventory：7,941

Littelfuse

IGBT Transistors rated at 320 Amps and 600V

CM100TJ-24F

Inventory：8,016

Powerex Inc.

1200V Breakdown Voltage