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BSM35GB120DN2

Insulated Gate Bipolar Transistor rated for 35A current and 1200V breakdown voltage, optimized for N-Channel operation in a MODULE-7 housing

Quantity Unit Price(USD) Ext. Price
1 $156.469 $156.47
200 $60.552 $12,110.40
500 $58.424 $29,212.00
1000 $57.373 $57,373.00

Inventory:8,815

*The price is for reference only.
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Overview of BSM35GB120DN2

The BSM35GB120DN2 is a dual IGBT module designed for high power switching applications in industrial and automotive systems. It features a compact design with built-in freewheeling diodes and is capable of handling high current and voltage levels, making it suitable for a wide range of power electronic applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Collector U (C1+): Collector terminal for upper IGBT
  • Emitter U (E1): Emitter terminal for upper IGBT
  • Collector L (C2+): Collector terminal for lower IGBT
  • Emitter L (E2): Emitter terminal for lower IGBT
  • G (G): Gate terminal for both upper and lower IGBTs
  • VCC (VCC): Positive power supply for gate driving
  • VSS (VSS): Power ground
  • FG (FG): Fault signal output
  • IN (IN): Turn-on signal input
  • S (S): Sensor input

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the BSM35GB120DN2 for a visual representation.

Key Features

  • Dual IGBT Module: Contains two IGBTs in a single package for high-power switching applications.
  • Built-in Freewheeling Diodes: Integrated diodes for efficient commutation and flyback operation.
  • High Current and Voltage Handling: Capable of handling high current and voltage levels for industrial and automotive applications.
  • Compact Design: Space-saving design for integration into densely packed electronic systems.
  • Fault Signal Output: Provides a fault signal output for protection and diagnostic purposes.

Note: For detailed technical specifications, please refer to the BSM35GB120DN2 datasheet.

Application

  • Motor Drives: Ideal for motor drive applications in industrial equipment and electric vehicles.
  • Power Inverters: Used in power inverter systems for converting DC power to AC power in solar and wind energy systems.
  • Switching Power Supplies: Suitable for high-power switching power supply units in industrial and automotive electronics.

Functionality

The BSM35GB120DN2 dual IGBT module is designed to handle high-power switching with built-in freewheeling diodes, making it a reliable and efficient solution for industrial and automotive power electronic systems.

Usage Guide

  • Power Supply: Connect VCC (Pin 6) to the positive power supply for gate driving.
  • Turn-on Control: Apply turn-on signal input (IN, Pin 8) to control the switching operation of the IGBTs.
  • Fault Monitoring: Utilize the fault signal output (FG, Pin 7) for protection and diagnostic monitoring.

Frequently Asked Questions

Q: Is the BSM35GB120DN2 suitable for automotive power applications?
A: Yes, the BSM35GB120DN2 is designed for high power switching in automotive systems, making it suitable for various automotive power applications.

Equivalent

For similar functionalities, consider these alternatives to the BSM35GB120DN2:

  • FSBB20CH60F: A similar dual IGBT module with integrated freewheeling diodes and high-power switching capabilities.
  • CIPOS™ Tiny: This is a compact intelligent power module suitable for motor drive and power inverter applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Modules RoHS N
Product IGBT Silicon Modules Configuration Half Bridge
Collector- Emitter Voltage VCEO Max 1.2 kV Collector-Emitter Saturation Voltage 3.2 V
Continuous Collector Current at 25 C 50 A Gate-Emitter Leakage Current 150 nA
Pd - Power Dissipation 280 W Package / Case Half Bridge1
Minimum Operating Temperature - 40 C Maximum Operating Temperature + 150 C
Brand Infineon Technologies Height 30.5 mm
Length 94 mm Maximum Gate Emitter Voltage 20 V
Mounting Style Chassis Mount Product Type IGBT Modules
Factory Pack Quantity 10 Subcategory IGBTs
Technology Si Width 34 mm
Part # Aliases SP000100461 BSM35GB120DN2HOSA1

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