BSM35GB120DN2
Insulated Gate Bipolar Transistor rated for 35A current and 1200V breakdown voltage, optimized for N-Channel operation in a MODULE-7 housing
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $156.469 | $156.47 |
200 | $60.552 | $12,110.40 |
500 | $58.424 | $29,212.00 |
1000 | $57.373 | $57,373.00 |
Inventory:8,815
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Part Number : BSM35GB120DN2
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Package/Case : Half Bridge1
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Brand : Infineon
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Components Classification : IGBT Modules
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Datesheet : BSM35GB120DN2 DataSheet (PDF)
The BSM35GB120DN2 is a dual IGBT module designed for high power switching applications in industrial and automotive systems. It features a compact design with built-in freewheeling diodes and is capable of handling high current and voltage levels, making it suitable for a wide range of power electronic applications. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the BSM35GB120DN2 for a visual representation. Note: For detailed technical specifications, please refer to the BSM35GB120DN2 datasheet. Functionality The BSM35GB120DN2 dual IGBT module is designed to handle high-power switching with built-in freewheeling diodes, making it a reliable and efficient solution for industrial and automotive power electronic systems. Usage Guide Q: Is the BSM35GB120DN2 suitable for automotive power applications? For similar functionalities, consider these alternatives to the BSM35GB120DN2:Overview of BSM35GB120DN2
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the BSM35GB120DN2 is designed for high power switching in automotive systems, making it suitable for various automotive power applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | IGBT Modules | RoHS | N |
Product | IGBT Silicon Modules | Configuration | Half Bridge |
Collector- Emitter Voltage VCEO Max | 1.2 kV | Collector-Emitter Saturation Voltage | 3.2 V |
Continuous Collector Current at 25 C | 50 A | Gate-Emitter Leakage Current | 150 nA |
Pd - Power Dissipation | 280 W | Package / Case | Half Bridge1 |
Minimum Operating Temperature | - 40 C | Maximum Operating Temperature | + 150 C |
Brand | Infineon Technologies | Height | 30.5 mm |
Length | 94 mm | Maximum Gate Emitter Voltage | 20 V |
Mounting Style | Chassis Mount | Product Type | IGBT Modules |
Factory Pack Quantity | 10 | Subcategory | IGBTs |
Technology | Si | Width | 34 mm |
Part # Aliases | SP000100461 BSM35GB120DN2HOSA1 |
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