CM200DY-24NF
N-Channel 1200V 200A
Inventory:9,966
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Part Number : CM200DY-24NF
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Package/Case : Module
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Brands : Mitsubishi Electric
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Components Categories : IGBT Modules
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Datesheet : CM200DY-24NF DataSheet (PDF)
The CM200DY-24NF is a dual IGBT module designed for high power switching applications. It features a compact
design with built-in protection features, making it suitable for various power electronic systems. The module
consists of two IGBTs in a half-bridge configuration, offering efficient and reliable switching performance. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise
details.) Include a circuit diagram illustrating the connections and operation of the CM200DY-24NF module for a visual
representation. Note: For detailed technical specifications, please refer to the CM200DY-24NF datasheet. Functionality The CM200DY-24NF dual IGBT module is designed to facilitate high-power switching in a compact and reliable
manner. With built-in protection features and efficient performance, it is an essential component in power
electronic systems. Usage Guide Q: What are the typical applications of the CM200DY-24NF module? Q: Does the CM200DY-24NF module provide built-in protection features? For similar functionalities, consider these alternatives to the CM200DY-24NF:Overview of CM200DY-24NF
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The CM200DY-24NF is
commonly used in motor drives, power inverters, and industrial automation systems for efficient power
control.
A: Yes, the module
includes built-in protection features such as fault feedback and inhibit signals to enhance reliability in
high-power switching applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | IGBT Modules | RoHS | Details |
Product | IGBT Silicon Modules | Configuration | Dual |
Collector- Emitter Voltage VCEO Max | 1.2 kV | Collector-Emitter Saturation Voltage | 1.8 V |
Continuous Collector Current at 25 C | 200 A | Gate-Emitter Leakage Current | 500 nA |
Pd - Power Dissipation | 1.13 kW | Minimum Operating Temperature | - 40 C |
Maximum Operating Temperature | + 150 C | Brand | Mitsubishi Electric |
Maximum Gate Emitter Voltage | 20 V | Mounting Style | Screw Mount |
Product Type | IGBT Modules | Factory Pack Quantity | 10 |
Subcategory | IGBTs | Technology | Si |
Warranty & Returns
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Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
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