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IXYN100N120C3H1

High Power N-Channel IGBT Chip with 1200V 140A Rating

Quantity Unit Price(USD) Ext. Price
1 $37.561 $37.56
30 $36.109 $1,083.27

Inventory:6,835

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Overview of IXYN100N120C3H1

The IXYN100N120C3H1 is a high-power IGBT designed for use in various power electronic applications. This IGBT features a high current rating and low conduction losses, making it suitable for applications that require efficient power conversion.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Collector (C): Positive terminal for the collector
  • Emitter (E): Emitter terminal
  • GATE (G): Gate terminal for controlling the IGBT
  • VCE: Collector-Emitter voltage rating
  • IC: Collector current rating
  • VGE: Gate-Emitter voltage rating
  • RG: Gate resistance

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXYN100N120C3H1 IGBT for a visual representation.

Key Features

  • High Current Rating: The IXYN100N120C3H1 offers a high collector current rating, making it suitable for high-power applications.
  • Low Conduction Losses: This IGBT minimizes conduction losses, leading to improved efficiency in power conversion.
  • Fast Switching Speed: With its fast switching characteristics, the IXYN100N120C3H1 enables rapid power control in electronic circuits.
  • High Breakdown Voltage: It features a high VCE rating, ensuring reliable operation in high-voltage applications.
  • Temperature Stability: The IXYN100N120C3H1 exhibits stable performance over a wide temperature range, enhancing its reliability in diverse environments.

Note: For detailed technical specifications, please refer to the IXYN100N120C3H1 datasheet.

Application

  • Power Inverters: Ideal for use in power inverters for converting DC power to AC power in applications such as motor drives and renewable energy systems.
  • Switching Power Supplies: Suitable for switching power supply applications that require efficient power conversion and control.
  • Motor Control: Used in motor control applications to regulate the speed and direction of motors in industrial equipment and appliances.

Functionality

The IXYN100N120C3H1 is a high-power IGBT that enables efficient power switching and control in various electronic systems. It provides robust performance and high reliability for demanding power applications.

Usage Guide

  • Gate Control: Apply the appropriate gate voltage (VGE) to control the switching behavior of the IGBT.
  • Current Handling: Ensure that the collector current (IC) does not exceed the specified rating to prevent device damage.
  • Heat Dissipation: Implement proper heat sinking and thermal management to maintain the IGBT within safe operating temperatures.

Frequently Asked Questions

Q: Can the IXYN100N120C3H1 be used in high-frequency applications?
A: While the IXYN100N120C3H1 offers fast switching speeds, it is recommended to refer to the datasheet for specific frequency limitations.

Equivalent

For similar functionalities, consider these alternatives to the IXYN100N120C3H1:

  • FH100N120H1: A high-power IGBT with comparable specifications for power electronic applications.
  • IXGQ500N30TH3: This IGBT offers similar performance characteristics but with a focus on lower power dissipation.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Transistors RoHS Details
Technology Si Package / Case SOT-227B-4
Mounting Style Screw Mount Configuration Single
Collector- Emitter Voltage VCEO Max 1.2 kV Collector-Emitter Saturation Voltage 3.5 V
Maximum Gate Emitter Voltage - 20 V, 20 V Continuous Collector Current at 25 C 140 A
Pd - Power Dissipation 690 W Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series IXYN100N120
Brand IXYS Continuous Collector Current 134 A
Continuous Collector Current Ic Max 440 A Gate-Emitter Leakage Current 100 nA
Height 9.6 mm Length 38.23 mm
Operating Temperature Range - 55 C to + 150 C Product Type IGBT Transistors
Factory Pack Quantity 10 Subcategory IGBTs
Tradename XPT, GenX3 Width 25.42 mm
Unit Weight 1.058219 oz

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