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BSM100GAL120DLCK

Insulated Gate Bipolar Transistor with a maximum collector current of 205A and a breakdown voltage of 1200V

Quantity Unit Price(USD) Ext. Price
1 $208.147 $208.15
200 $80.551 $16,110.20
500 $77.719 $38,859.50
1000 $76.321 $76,321.00

Inventory:6,578

*The price is for reference only.
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Overview of BSM100GAL120DLCK

The BSM100GAL120DLCK is a high-power IGBT module designed for industrial applications requiring efficient power conversion and control. This module combines high current and voltage ratings with robust construction for reliable operation in demanding environments.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VCE: Collector-Emitter Voltage
  • G: Gate Control
  • E: Emitter Connection
  • DC+: Positive DC Supply
  • DC-: Negative DC Supply
  • VC: Collector Connection
  • GND: Module Ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the BSM100GAL120DLCK module for a visual representation.

Key Features

  • High-Power IGBT Module: Offers high current and voltage ratings for industrial power applications.
  • Robust Construction: Designed for reliability and durability in harsh operating conditions.
  • Efficient Power Conversion: Ensures efficient power conversion and control in industrial systems.
  • Easy Installation: Module comes with standard pin configurations for easy integration into existing systems.
  • Overcurrent Protection: Includes built-in protection mechanisms for safeguarding the module and connected components.

Note: For detailed technical specifications, please refer to the BSM100GAL120DLCK datasheet.

Application

  • Motor Drives: Suitable for motor control applications in industrial machinery and automation systems.
  • Power Inverters: Used in power inverters for converting DC power to AC power in various power systems.
  • Renewable Energy Systems: Ideal for integrating into renewable energy systems such as solar inverters and wind turbines.

Functionality

The BSM100GAL120DLCK IGBT module provides high-power switching capabilities for efficient power control in industrial applications. It ensures reliable performance and precise power management in various power electronics systems.

Usage Guide

  • Power Connections: Connect the positive and negative DC supplies to the respective terminals for proper operation.
  • Gate Control: Use the gate control signal to regulate the switching behavior of the IGBT module.
  • Heat Management: Ensure proper heat dissipation to prevent overheating of the module during operation.

Frequently Asked Questions

Q: Is the BSM100GAL120DLCK suitable for high-frequency switching applications?
A: Yes, the BSM100GAL120DLCK is designed to handle high-frequency switching operations effectively.

Equivalent

For similar functionalities, consider these alternatives to the BSM100GAL120DLCK:

  • FS75R12KE3: A high-power IGBT module with comparable specifications and performance characteristics.
  • CM600HA-24H: Another industrial IGBT module offering similar high-power capabilities for industrial applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Modules RoHS Details
Product IGBT Silicon Modules Configuration Single
Collector- Emitter Voltage VCEO Max 1.2 kV Collector-Emitter Saturation Voltage 2.1 V
Continuous Collector Current at 25 C 205 A Gate-Emitter Leakage Current 400 nA
Pd - Power Dissipation 830 W Package / Case 32 mm
Minimum Operating Temperature - 40 C Maximum Operating Temperature + 125 C
Brand Infineon Technologies Height 30.5 mm
Length 94 mm Maximum Gate Emitter Voltage 20 V
Mounting Style Chassis Mount Product Type IGBT Modules
Factory Pack Quantity 10 Subcategory IGBTs
Technology Si Width 34 mm
Part # Aliases SP000100477 BSM100GAL120DLCKHOSA1

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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