BSM50GP60G
Insulated Gate Bipolar Transistor
Inventory:5,302
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Part Number : BSM50GP60G
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Package/Case : Module
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Brand : Infineon Technologies
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Components Classification : IGBT Modules
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Datesheet : BSM50GP60G DataSheet (PDF)
Overview of BSM50GP60G
The BSM50GP60G by Infineon Technologies is a powerful dual IGBT module that is perfect for a wide range of high power industrial applications. With its half-bridge configuration and high voltage and current ratings, this module is capable of handling heavy-duty tasks such as motor control, renewable energy systems, and welding equipment. Its low on-state voltage drop and high switching frequency capabilities also make it an energy-efficient choice for applications requiring frequent switching
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Package | Tray | Product Status | Obsolete |
| Configuration | Three Phase Inverter | Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector (Ic) (Max) | 70 A | Power - Max | 250 W |
| Vce(on) (Max) @ Vge, Ic | 2.55V @ 15V, 50A | Current - Collector Cutoff (Max) | 500 µA |
| Input Capacitance (Cies) @ Vce | 2.8 nF @ 25 V | Input | Three Phase Bridge Rectifier |
| NTC Thermistor | Yes | Operating Temperature | -40°C ~ 125°C |
| Mounting Type | Chassis Mount | Package / Case | Module |
| Supplier Device Package | Module | Base Product Number | BSM50G |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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