BSM200GB120DN2
Dual IGBT Modules with 1200V and 200A rating
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $203.916 | $203.92 |
30 | $195.646 | $5,869.38 |
Inventory:5,146
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Part Number : BSM200GB120DN2
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Package/Case : Half Bridge2
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Brand : Infineon
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Components Classification : IGBT Modules
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Datesheet : BSM200GB120DN2 DataSheet (PDF)
The BSM200GB120DN2 is a dual IGBT power module designed for high power switching applications. It features a high current capability and low saturation voltage, making it suitable for various high voltage and high power industrial applications. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the BSM200GB120DN2 for a visual representation. Note: For detailed technical specifications, please refer to the BSM200GB120DN2 datasheet. Functionality The BSM200GB120DN2 is a dual IGBT power module designed for high power switching applications. It provides reliable and efficient power management in industrial systems. Usage Guide Q: Is the BSM200GB120DN2 suitable for high frequency switching applications? For similar functionalities, consider these alternatives to the BSM200GB120DN2:Overview of BSM200GB120DN2
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the BSM200GB120DN2 is designed to handle high frequency switching operations effectively.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | IGBT Modules | RoHS | Details |
Product | IGBT Silicon Modules | Configuration | Half Bridge |
Collector- Emitter Voltage VCEO Max | 1.2 kV | Collector-Emitter Saturation Voltage | 2.5 V |
Continuous Collector Current at 25 C | 290 A | Gate-Emitter Leakage Current | 400 nA |
Pd - Power Dissipation | 1.4 kW | Package / Case | Half Bridge2 |
Minimum Operating Temperature | - 40 C | Maximum Operating Temperature | + 150 C |
Brand | Infineon Technologies | Height | 30 mm |
Length | 106.4 mm | Maximum Gate Emitter Voltage | 20 V |
Mounting Style | Chassis Mount | Product Type | IGBT Modules |
Factory Pack Quantity | 10 | Subcategory | IGBTs |
Technology | Si | Width | 61.4 mm |
Part # Aliases | SP000014913 BSM200GB120DN2HOSA1 |
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