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BSM200GB120DN2

Dual IGBT Modules with 1200V and 200A rating

Quantity Unit Price(USD) Ext. Price
1 $203.916 $203.92
30 $195.646 $5,869.38

Inventory:5,146

*The price is for reference only.
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Overview of BSM200GB120DN2

The BSM200GB120DN2 is a dual IGBT power module designed for high power switching applications. It features a high current capability and low saturation voltage, making it suitable for various high voltage and high power industrial applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VCE: Collector-Emitter Voltage
  • G: Gate
  • E: Emitter
  • VCE: Collector-Emitter Voltage
  • G: Gate
  • E: Emitter

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the BSM200GB120DN2 for a visual representation.

Key Features

  • Dual IGBT Power Module: Provides high power switching capability with dual IGBTs in a single module.
  • High Current Capability: Capable of handling high currents, suitable for high power applications.
  • Low Saturation Voltage: Features low saturation voltage for efficient power management.
  • High Voltage Rating: Designed to operate at high voltages, making it suitable for industrial applications.
  • Robust Construction: Built to withstand high power and high voltage conditions in industrial environments.

Note: For detailed technical specifications, please refer to the BSM200GB120DN2 datasheet.

Application

  • Industrial Motor Drives: Ideal for use in high power motor drives for industrial machinery and equipment.
  • Power Supplies: Suitable for high power switching power supply applications.
  • Renewable Energy Systems: Used in inverters and power converters for renewable energy systems.

Functionality

The BSM200GB120DN2 is a dual IGBT power module designed for high power switching applications. It provides reliable and efficient power management in industrial systems.

Usage Guide

  • Power Connection: Connect the collector-emitter terminals to the high power source.
  • Gate Control: Apply appropriate gate voltage to control the IGBT switching.
  • Heat Management: Ensure proper heat sinking and thermal management for high power operation.

Frequently Asked Questions

Q: Is the BSM200GB120DN2 suitable for high frequency switching applications?
A: Yes, the BSM200GB120DN2 is designed to handle high frequency switching operations effectively.

Equivalent

For similar functionalities, consider these alternatives to the BSM200GB120DN2:

  • FS200R12KE3: This is a dual IGBT module from Infineon with comparable high power switching capabilities.
  • FF200R12KT3: Another dual IGBT power module from Infineon, offering similar performance and features.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Modules RoHS Details
Product IGBT Silicon Modules Configuration Half Bridge
Collector- Emitter Voltage VCEO Max 1.2 kV Collector-Emitter Saturation Voltage 2.5 V
Continuous Collector Current at 25 C 290 A Gate-Emitter Leakage Current 400 nA
Pd - Power Dissipation 1.4 kW Package / Case Half Bridge2
Minimum Operating Temperature - 40 C Maximum Operating Temperature + 150 C
Brand Infineon Technologies Height 30 mm
Length 106.4 mm Maximum Gate Emitter Voltage 20 V
Mounting Style Chassis Mount Product Type IGBT Modules
Factory Pack Quantity 10 Subcategory IGBTs
Technology Si Width 61.4 mm
Part # Aliases SP000014913 BSM200GB120DN2HOSA1

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