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BSM50GD120DN2G

High-Voltage IGBT Modules Suitable for Three-Phase Applications

Inventory:8,523

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Overview of BSM50GD120DN2G

The BSM50120DN2G is a power module designed for use in industrial applications. It is part the IGBT (Insulated Gate Bipolar Transistor) module family and offers high and reliability. This module combines an IGBT chip with a diode, enabling it to high current and voltage levels.

Key Features

    >High Power Handling: The BSM50GD120DN2G can handle high currents up to 100A andages up to 1,200V, making it suitable for industrial power applications. >Low Saturation Voltage: It features low saturation voltage, resulting in reduced power losses operation.
  • High Switching Speed: With its fast switching speed, this allows for efficient switching between ON and OFF states.
  • Integrated Temperature Sensors The BSM50GD120DN2G includes built-in temperature sensors that help monitor device's temperature during operation.
  • Ease of Installation: This module comes in compact package with standardized electrical connections, making it easy to install and replace.
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    Note: For detailed technical specifications, please refer to the BSM50GDDN2G datasheet provided by the manufacturer.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Modules RoHS N
Product IGBT Silicon Modules Configuration Hex
Collector- Emitter Voltage VCEO Max 1.2 kV Collector-Emitter Saturation Voltage 2.5 V
Continuous Collector Current at 25 C 78 A Gate-Emitter Leakage Current 200 nA
Pd - Power Dissipation 400 W Package / Case EconoPACK 3A
Minimum Operating Temperature - 40 C Maximum Operating Temperature + 150 C
Brand Infineon Technologies Height 17 mm
Length 122 mm Maximum Gate Emitter Voltage 20 V
Mounting Style Chassis Mount Product Type IGBT Modules
Factory Pack Quantity 10 Subcategory IGBTs
Technology Si Width 62 mm

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