BSM400GA120DN2
IGBT Modules with a voltage of 1200V and current rating of 400A
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $209.409 | $209.41 |
30 | $200.917 | $6,027.51 |
Inventory:7,891
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Part Number : BSM400GA120DN2
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Package/Case : Module
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Brand : Infineon Technologies
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Components Classification : IGBT Modules
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Datesheet : BSM400GA120DN2 DataSheet (PDF)
The BSM400GA120DN2 is a high-power IGBT module designed for various industrial and commercial applications. It features a robust design and high-performance characteristics, making it suitable for power electronic systems and motor control applications. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the BSM400GA120DN2 for a visual representation. Note: For detailed technical specifications, please refer to the BSM400GA120DN2 datasheet. Functionality The BSM400GA120DN2 is a high-power IGBT module designed for efficient power control and switching in various applications. It offers reliable performance and robust protection features for enhanced system safety. Usage Guide Q: Is the BSM400GA120DN2 suitable for high-frequency switching applications? For similar functionalities, consider these alternatives to the BSM400GA120DN2:Overview of BSM400GA120DN2
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the BSM400GA120DN2 offers high-speed switching capability and is suitable for high-frequency switching requirements in power electronic systems.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | IGBT Modules | RoHS | N |
Product | IGBT Silicon Modules | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 1.2 kV | Collector-Emitter Saturation Voltage | 2.5 V |
Continuous Collector Current at 25 C | 550 A | Gate-Emitter Leakage Current | 400 nA |
Pd - Power Dissipation | 2.7 kW | Package / Case | 62 mm |
Minimum Operating Temperature | - 40 C | Maximum Operating Temperature | + 150 C |
Brand | Infineon Technologies | Height | 36.5 mm |
Length | 106.4 mm | Maximum Gate Emitter Voltage | 20 V |
Mounting Style | Chassis Mount | Product Type | IGBT Modules |
Factory Pack Quantity | 10 | Subcategory | IGBTs |
Technology | Si | Width | 61.4 mm |
Part # Aliases | SP000100728 BSM400GA120DN2HOSA1 |
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