BSM100GB120DLC
BSM100GB120DLC is a dual IGBT module with a voltage rating of 1200V and a current rating of 100A
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $340.108 | $340.11 |
200 | $131.618 | $26,323.60 |
500 | $126.992 | $63,496.00 |
1000 | $124.707 | $124,707.00 |
Inventory:6,390
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Part Number : BSM100GB120DLC
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Package/Case : Module
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Brand : Infineon Technologies
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Components Classification : IGBT Modules
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Datesheet : BSM100GB120DLC DataSheet (PDF)
The BSM100GB120DLC is a high-power IGBT module designed for use in industrial and power electronic applications. It features a compact and robust design, making it suitable for high-performance and demanding environments. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the BSM100GB120DLC IGBT module for a visual representation. Note: For detailed technical specifications, please refer to the BSM100GB120DLC datasheet. Functionality The BSM100GB120DLC is a high-power IGBT module that provides efficient power switching and control capabilities, making it essential for various industrial and power electronic applications. Usage Guide Q: Is the BSM100GB120DLC suitable for high-frequency applications? For similar functionalities, consider these alternatives to the BSM100GB120DLC:Overview of BSM100GB120DLC
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: While the BSM100GB120DLC offers fast switching speeds, it is recommended to consult the datasheet for specific frequency capabilities.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | IGBT Modules | RoHS | N |
Product | IGBT Silicon Modules | Configuration | Dual |
Collector- Emitter Voltage VCEO Max | 1.2 kV | Collector-Emitter Saturation Voltage | 2.1 V |
Continuous Collector Current at 25 C | 200 A | Gate-Emitter Leakage Current | 400 nA |
Pd - Power Dissipation | 780 W | Package / Case | 62 mm |
Minimum Operating Temperature | - 40 C | Maximum Operating Temperature | + 125 C |
Brand | Infineon Technologies | Height | 30.5 mm |
Length | 106.4 mm | Maximum Gate Emitter Voltage | 20 V |
Mounting Style | Chassis Mount | Product Type | IGBT Modules |
Factory Pack Quantity | 10 | Subcategory | IGBTs |
Technology | Si | Width | 61.4 mm |
Part # Aliases | SP000100721 BSM100GB120DLCHOSA1 |
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