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FZ1200R33KF2C

3300V 2KA 14500W

Quantity Unit Price(USD) Ext. Price
1 $2,542.665 $2,542.66
30 $2,439.555 $73,186.65

Inventory:8,322

*The price is for reference only.
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Overview of FZ1200R33KF2C

The FZ1200R33KF2C is a high-power N-Channel IGBT designed for use in power electronic applications, especially inverter and motor control systems. It features a high current and voltage rating, making it suitable for high-power industrial applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Collector (C): Main terminal for the collector connection
  • Emitter (E): Main terminal for the emitter connection
  • G: Gate terminal for controlling the IGBT switching

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the FZ1200R33KF2C IGBT for a visual representation.

Key Features

  • High Voltage and Current Rating: The FZ1200R33KF2C can handle high voltages and currents, suitable for power conversion applications.
  • Fast Switching Speed: This IGBT offers fast switching characteristics, contributing to efficient power control.
  • Low Saturation Voltage: Features a low saturation voltage to minimize power losses during operation.
  • Robust Thermal Performance: Designed to withstand high-temperature operation, ensuring reliability in demanding environments.

Note: For detailed technical specifications, please refer to the FZ1200R33KF2C datasheet.

Application

  • Power Inverters: Ideal for use in high-power inverters for industrial and renewable energy applications.
  • Motor Drives: Suitable for motor control systems in industrial automation and electric vehicle propulsion.
  • Switching Power Supplies: Used in high-power switching power supply designs for efficient power conversion.

Functionality

The FZ1200R33KF2C is a high-power N-channel IGBT that enables efficient power switching and control in various power electronic applications, ensuring reliable performance under high-load conditions.

Usage Guide

  • Power Connection: Connect the collector (C) and emitter (E) terminals to the corresponding power supply and load connections.
  • Gate Control: Apply the appropriate gate signal to the G terminal to control the switching behavior of the IGBT.

Equivalent

For similar functionalities, consider these alternatives to the FZ1200R33KF2C:

  • FZ1600R12KF4: This is a similar high-power IGBT with higher voltage and current ratings, suitable for more demanding power applications.
  • IXGN60N60C2D1: An alternative N-channel IGBT offering comparable power handling capabilities and switching characteristics.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Package Tray Product Status Obsolete
Configuration Full Bridge Voltage - Collector Emitter Breakdown (Max) 3300 V
Current - Collector (Ic) (Max) 2000 A Power - Max 14500 W
Vce(on) (Max) @ Vge, Ic 4.25V @ 15V, 1200A Current - Collector Cutoff (Max) 12 mA
Input Capacitance (Cies) @ Vce 150 nF @ 25 V Input Standard
NTC Thermistor No Operating Temperature -40°C ~ 125°C
Mounting Type Chassis Mount Package / Case Module
Supplier Device Package Module Base Product Number FZ1200

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