BSM300GA120DLC
MODULE-5 POWER SEMICONDUCTOR DEVICE
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $399.216 | $399.22 |
200 | $154.491 | $30,898.20 |
500 | $149.063 | $74,531.50 |
1000 | $146.379 | $146,379.00 |
Inventory:8,551
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : BSM300GA120DLC
-
Package/Case : Module
-
Brand : Infineon Technologies
-
Components Classification : IGBT Modules
-
Datesheet : BSM300GA120DLC DataSheet (PDF)
Overview of BSM300GA120DLC
In conclusion, the BSM300GA120DLC power module stands as a testament to technological innovation and reliability. Its high-power capabilities, efficient operation, and comprehensive protection features make it a go-to option for industrial and automotive applications, offering unparalleled performance and peace of mind for system designers and engineers. With its ability to seamlessly integrate into existing systems, the BSM300GA120DLC sets a new benchmark for power module versatility and performance
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Package | Tray | Product Status | Obsolete |
Configuration | Single | Voltage - Collector Emitter Breakdown (Max) | 1200 V |
Current - Collector (Ic) (Max) | 570 A | Power - Max | 2250 W |
Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 300A | Current - Collector Cutoff (Max) | 5 mA |
Input Capacitance (Cies) @ Vce | 22 nF @ 25 V | Input | Standard |
NTC Thermistor | No | Operating Temperature | -40°C ~ 125°C |
Mounting Type | Chassis Mount | Package / Case | Module |
Supplier Device Package | Module | Base Product Number | BSM300 |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
![BSS126H6327XTSA2](/files/uploads/product/s/c165e26911ac44d49951c7c58bb325e9.webp)
BSS126H6327XTSA2
SOT23 PNP Transistor with 250x Amplification Factor, 45V VCE and 800mA IC Rating
![BSZ096N10LS5ATMA1](/files/uploads/product/s/c22abd53a0074d0c9d0e9b40aafbdb87.webp)
BSZ096N10LS5ATMA1
OptiMOSTM5Power-Transistor,100V
![BSP613PH6327XTSA1](/files/uploads/product/s/79ea39bd39754352bd269045c808aa00.webp)
BSP613PH6327XTSA1
P-MOSFET transistor with unipolar operation, -60V voltage rating, -2.9A current rating, and 1.8W power dissipation in PG-SOT223 package
![PBSS4350Z,135](/files/uploads/product/s/7656189f24594278a1f21e332a58ccea.webp)
PBSS4350Z,135
NPN3ASOT223PBSS4350Z, PK with 135 of product PBSS4350Z
![BSH103,215](/files/uploads/product/s/301702731e90472fbeb98ec4873afbf3.webp)
BSH103,215
N-channel MOSFET transistor with 30V voltage and 0.85A current
![BSC600N25NS3 G](/files/uploads/product/s/ae25802a96554fe6859b284989c6ad6a.webp)
BSC600N25NS3 G
High-performance Power Transistor
![BSP52T1G](/files/uploads/product/s/015d577991084514896734e58b20a644.webp)
BSP52T1G
NPN Small-Signal Darlington Transistor
![BSC077N12NS3 G](/files/uploads/product/s/bb69a7f30705490ba43eb722c5d14890.webp)
BSC077N12NS3 G
-pin TDSON EP package
![BSZ16DN25NS3G](/files/uploads/product/s/a5c66d7e4d6b45b688389290ca66ac99.webp)
BSZ16DN25NS3G
Advanced power management solutions for modern electronics
![BC856BS,115](/img/package/sc70.jpg)
BC856BS,115
Trans GP BJT PNP 65V 0.1A 300mW Automotive AEC-Q101 6-Pin TSSOP T/R
![2N7000RLRAG](/img/package/to92.jpg)
2N7000RLRAG
MOSFET with N-channel design, rated for 60 volts and 200 milliamps
![BC546BTA](/img/package/to923.jpg)
BC546BTA
BC546BTA is a NPN Bipolar Junction Transistor, with a voltage rating of 65V and a current rating of 0.1A, housed in a TO-92 package
![BSM150GB120DLC](/img/package/module.jpg)
BSM150GB120DLC
Trans IGBT Module N-CH 1200V 300A 1250W 7-Pin 62MM-1 Tray
![NGTG15N60S1EG](/img/package/to220.jpg)
NGTG15N60S1EG
TO-220 IGBTs ROHS
![IXFN100N50P](/img/package/sot.jpg)
IXFN100N50P
SOT227B module housing a single transistor rated for 500V and 75A, with screw attachment and a maximum current capability of 250A
![IXSH35N140A](/img/package/to247.jpg)
IXSH35N140A
IXSH35N140A: N-Channel Insulated Gate Bipolar Transistor (IGBT) Chip, 1400V, 70A, 300mW, TO-247AD Configuration
![DMP2165UW-7](/files/uploads/product/s/166f8b6166354f45bd5ec7ce0b71cd49.webp)
DMP2165UW-7
Established French Electronics Provider
![DMN2058UW-7](/img/package/sot323.jpg)
DMN2058UW-7
N-Channel MOSFET with a current rating of 3.7A in State and 4.6A Steady, designed by Diodes Inc
![IRF740SPBF](/img/package/d2pak3.jpg)
IRF740SPBF
VISHAY - IRF740SPBF. - Power MOSFET, N Channel, 400 V, 10 A, 0.55 ohm, TO-263 (D2PAK), Surface Mount
![2SC3506](/img/package/to-3.jpg)
2SC3506
800V Breakdown Voltage