BSM100GB170DLC
N-Channel Insulated Gate Bipolar Transistor with 200A Current Rating and 1700V Voltage Rating, Packaged in Module-7
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Part Number : BSM100GB170DLC
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Package/Case : MODULE
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Brand : Infineon Technologies
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Components Classification : IGBT Modules
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Datesheet : BSM100GB170DLC DataSheet (PDF)
The BSM100GB170DLC is a dual IGBT power module designed for high-power applications in industrial and commercial settings. This module combines two Insulated Gate Bipolar Transistors (IGBTs) in a single package, providing efficient power switching and control capabilities. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the BSM100GB170DLC module for a visual representation. Note: For detailed technical specifications, please refer to the BSM100GB170DLC datasheet. Functionality The BSM100GB170DLC dual IGBT module provides efficient power switching capabilities for high-power applications, ensuring reliable performance in demanding environments. Usage Guide Q: Is the BSM100GB170DLC suitable for high-frequency switching applications? For similar functionalities, consider these alternatives to the BSM100GB170DLC:Overview of BSM100GB170DLC
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the BSM100GB170DLC is designed for high-frequency switching with fast switching speeds.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | IGBT Modules | RoHS | N |
Product | IGBT Silicon Modules | Configuration | Dual |
Collector- Emitter Voltage VCEO Max | 1.7 kV | Collector-Emitter Saturation Voltage | 2.6 V |
Continuous Collector Current at 25 C | 200 A | Gate-Emitter Leakage Current | 200 nA |
Pd - Power Dissipation | 960 W | Package / Case | 62 mm |
Minimum Operating Temperature | - 40 C | Maximum Operating Temperature | + 125 C |
Brand | Infineon Technologies | Height | 30.5 mm |
Length | 106.4 mm | Maximum Gate Emitter Voltage | 20 V |
Mounting Style | Chassis Mount | Product Type | IGBT Modules |
Factory Pack Quantity | 10 | Subcategory | IGBTs |
Technology | Si | Width | 61.4 mm |
Part # Aliases | SP000100709 BSM100GB170DLCHOSA1 |
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