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BSM100GB170DLC

N-Channel Insulated Gate Bipolar Transistor with 200A Current Rating and 1700V Voltage Rating, Packaged in Module-7

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Overview of BSM100GB170DLC

The BSM100GB170DLC is a dual IGBT power module designed for high-power applications in industrial and commercial settings. This module combines two Insulated Gate Bipolar Transistors (IGBTs) in a single package, providing efficient power switching and control capabilities.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Collector (C-): Connect to the collector terminal of the IGBT
  • Emitter (E-): Connect to the emitter terminal of the IGBT
  • GATE_E: Gate connection for the emitter IGBT
  • GATE_C: Gate connection for the collector IGBT
  • VCC: Positive power supply
  • GND: Power ground
  • NC: No connection
  • NC: No connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the BSM100GB170DLC module for a visual representation.

Key Features

  • Dual IGBT Power Module: Integrates two IGBTs in a single package for high-power applications.
  • High Efficiency: The BSM100GB170DLC offers high efficiency power switching for improved performance.
  • Low Thermal Resistance: Designed with low thermal resistance for enhanced thermal management.
  • Fast Switching Speed: Provides fast switching characteristics for quick response times.
  • Overcurrent Protection: Includes overcurrent protection features for added reliability.

Note: For detailed technical specifications, please refer to the BSM100GB170DLC datasheet.

Application

  • Motor Drives: Ideal for motor drive applications requiring high power handling.
  • Power Inverters: Suitable for use in power inverters for converting DC power to AC power.
  • Industrial Automation: Used in industrial automation systems for power control and switching.

Functionality

The BSM100GB170DLC dual IGBT module provides efficient power switching capabilities for high-power applications, ensuring reliable performance in demanding environments.

Usage Guide

  • Power Supply: Connect the VCC pin to the positive power supply and the GND pin to the power ground.
  • Gate Connections: Apply appropriate gate signals to the GATE_E and GATE_C pins for controlling the emitter and collector IGBTs.

Frequently Asked Questions

Q: Is the BSM100GB170DLC suitable for high-frequency switching applications?
A: Yes, the BSM100GB170DLC is designed for high-frequency switching with fast switching speeds.

Equivalent

For similar functionalities, consider these alternatives to the BSM100GB170DLC:

  • IXYS MCC312-16io1
  • Infineon FF450R17ME4_B2
  • Mitsubishi CM600DY-24A

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Modules RoHS N
Product IGBT Silicon Modules Configuration Dual
Collector- Emitter Voltage VCEO Max 1.7 kV Collector-Emitter Saturation Voltage 2.6 V
Continuous Collector Current at 25 C 200 A Gate-Emitter Leakage Current 200 nA
Pd - Power Dissipation 960 W Package / Case 62 mm
Minimum Operating Temperature - 40 C Maximum Operating Temperature + 125 C
Brand Infineon Technologies Height 30.5 mm
Length 106.4 mm Maximum Gate Emitter Voltage 20 V
Mounting Style Chassis Mount Product Type IGBT Modules
Factory Pack Quantity 10 Subcategory IGBTs
Technology Si Width 61.4 mm
Part # Aliases SP000100709 BSM100GB170DLCHOSA1

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