BSM15GD120DN2E3224
ECONOPACK-17 Insulated Gate Bipolar Transistor capable of 25A I(C) and 1200V V(BR)CES in N-Channel
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $147.757 | $147.76 |
200 | $57.180 | $11,436.00 |
500 | $55.171 | $27,585.50 |
1000 | $54.179 | $54,179.00 |
Inventory:7,083
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Part Number : BSM15GD120DN2E3224
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Package/Case : EconoPACK 2
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Brand : Infineon
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Components Classification : IGBT Modules
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Datesheet : BSM15GD120DN2E3224 DataSheet (PDF)
The BSM15GD120DN2E3224 is an IGBT module designed for high power switching applications in industrial and automotive systems. It features a high current rating and low saturation voltage, making it suitable for motor drives, inverters, and other power electronic applications. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the BSM15GD120DN2E3224 module for a visual representation. Note: For detailed technical specifications, please refer to the BSM15GD120DN2E3224 datasheet. Functionality The BSM15GD120DN2E3224 is an IGBT module designed for high-power switching applications. It provides efficient and robust control of high currents and voltages in various power electronic systems. Usage Guide Q: Can the BSM15GD120DN2E3224 be used in automotive applications? For similar functionalities, consider these alternatives to the BSM15GD120DN2E3224:Overview of BSM15GD120DN2E3224
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the BSM15GD120DN2E3224 is suitable for high-power switching applications in automotive systems such as electric vehicles and hybrid drivetrains.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | IGBT Modules | RoHS | Details |
Product | IGBT Silicon Modules | Configuration | Full Bridge |
Collector- Emitter Voltage VCEO Max | 1.2 kV | Collector-Emitter Saturation Voltage | 2.5 V |
Continuous Collector Current at 25 C | 25 A | Gate-Emitter Leakage Current | 150 nA |
Pd - Power Dissipation | 145 W | Package / Case | EconoPACK 2 |
Minimum Operating Temperature | - 40 C | Maximum Operating Temperature | + 150 C |
Brand | Infineon Technologies | Height | 17 mm |
Length | 107.5 mm | Maximum Gate Emitter Voltage | 20 V |
Mounting Style | Chassis Mount | Product Type | IGBT Modules |
Factory Pack Quantity | 10 | Subcategory | IGBTs |
Technology | Si | Width | 45 mm |
Part # Aliases | BSM15GD120DN2E3224BOSA1 SP000100360 BSM15GD120DN2E3224BOSA1 | Unit Weight | 9.782704 oz |
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