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Semikron
Trans IGBT Module N-CH 600V 265A 7-Pin Case D-61
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Inventory:6,463
Trans IGBT Module N-CH 600V 265A 7-Pin Case D-61
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Channel Insulated Gate Bipolar Transistor, 78A I(C), 1200V V(BR)CES
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24-Pin ECONO2-5 Package
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N-Channel Insulated Gate Bipolar Transistor housed in MODULE-7 packaging, capable of handling currents up to 2600A and voltages up to 1700V
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N-Channel Insulated Gate Bipolar Transistor housed in MODULE-7 packaging, capable of handling currents up to 2600A and voltages up to 1700V
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IFS200V12PT4: MIPAQ™ Base AG-MIPAQ-3, 200.0 A, 1.75 V, sixpack, IGBT4, EconoPACK™ 4
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IFS200V12PT4: MIPAQ™ Base AG-MIPAQ-3, 200.0 A, 1.75 V, sixpack, IGBT4, EconoPACK™ 4
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Insulated Gate Bipolar Transistor, 1600A I(C), 1200V V(BR)CES, N-Channel
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Low-power economical IGBT modules (FS100R17N3E4)
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Semikron
Robust power semiconductor for industrial automation and contro
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Robust power semiconductor for industrial automation and contro
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Durable and high-performance electrical component for industrial us
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Siliconix
Rectifying bridge components with 1200V and 80A specifications
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Rectifying bridge components with 1200V and 80A specifications
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Insulated Gate Bipolar Transistor module rated for 1200 volts and 187 amps, delivering 890 watts in SOT227 configuration
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Insulated Gate Bipolar Transistor module rated for 1200 volts and 187 amps, delivering 890 watts in SOT227 configuration
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Trans IGBT Module N-CH 1200V 139A 658W 4-Pin SOT-227
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budget-friendly low energy option
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High-reliability , A IGBT modules offer superior thermal performance, low noise emissions, and precise control over power flo
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High-reliability , A IGBT modules offer superior thermal performance, low noise emissions, and precise control over power flo
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CIPOS MINI 600V 20A IPM IQFN-37
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Cost-effective solution for small-scale industrial drive
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IXYS MID75-12A3, IGBT Module, 90 A max, 1200 V, 7-Pin Y4 M5
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onsemi
This trans IGBT module is designed for demanding rail-to-rail switching operations up to and A current capabilitie
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This trans IGBT module is designed for demanding rail-to-rail switching operations up to and A current capabilitie
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F5-75R06KE3_B5 specifications
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Infineon
Reliable and cost-effective for low-voltage drives: A top-notch choice for motor control, lighting, and other DC/AC conversion project
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Reliable and cost-effective for low-voltage drives: A top-notch choice for motor control, lighting, and other DC/AC conversion project
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Infineon Technologies
The BSM200GB170DLC is an N-channel Insulated Gate Bipolar Transistor designed to handle currents up to 400A and withstand voltages of 1700V
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The BSM200GB170DLC is an N-channel Insulated Gate Bipolar Transistor designed to handle currents up to 400A and withstand voltages of 1700V
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4. Product FS150R12PT4
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IXYS
Power module with IGBT and diode/transistor components, 600V voltage tolerance, 35A current handling
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High-power transistor for demanding applications
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STMicroelectronics
Trans IGBT Module N-CH 600V 200A 600W 4-Pin ISOTOP Tube
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Trans IGBT Module N-CH 1200V 25A 197W 22-Pin ACEPACK-1 Tray
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Explore the FF200R06KE3, a top-tier Trans IGBT Module engineered to deliver superior performance in power management applications
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Explore the FF200R06KE3, a top-tier Trans IGBT Module engineered to deliver superior performance in power management applications
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High-power switching device for demanding motor control application
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Compact 4-pin package enables easy integration into existing systems
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Trans IGBT Module N-CH 1200V 320A 1100W 7-Pin 62MM-1 Tray
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High Power N-Channel IGBT
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Advanced design ensures high reliability, low losses and compact siz
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Advanced design ensures high reliability, low losses and compact siz
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Low power solutions just got a whole lot easier with these compact and reliable IGBT modules
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Easy integration into motor control systems assured
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IGBT4 trench/field stop MIPAQ base module
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High-power switching device for demanding application