ZXTD4591E6TA
Small signal bipolar transistor with 1A collector current and 60V breakdown voltage
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $0.267 | $0.27 |
10 | $0.232 | $2.32 |
30 | $0.217 | $6.51 |
100 | $0.198 | $19.80 |
500 | $0.188 | $94.00 |
1000 | $0.184 | $184.00 |
Inventory:6,666
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Part Number : ZXTD4591E6TA
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Package/Case : SOT23-6
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Brand : Diodes Incorporated
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Components Classification : Bipolar Transistor Arrays
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Datesheet : ZXTD4591E6TA DataSheet (PDF)
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Series : ZXTD4591
The ZXTD4591E6TA is a high-efficiency dual bipolar junction transistor (BJT) power module designed for high-power switching applications.This module integrates two NPN transistors in a single package,providing a compact and efficient solution for power management. (Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the ZXTD4591E6TA power module for a visual representation. Note: For detailed technical specifications, please refer to the ZXTD4591E6TA datasheet. Functionality The ZXTD4591E6TA power module integrates dual NPN transistors to provide efficient and reliable power switching capabilities.It is designed to meet the demands of high-power applications while ensuring optimal performance. Usage Guide Q: Is the ZXTD4591E6TA designed for continuous operation in high-temperature environments? For similar functionalities, consider these alternatives to the ZXTD4591E6TA:Overview of ZXTD4591E6TA
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the ZXTD4591E6TA is designed to operate reliably even in high-temperature environments, ensuring consistent performance.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | Bipolar Transistors - BJT | RoHS | Details |
Mounting Style | SMD/SMT | Package / Case | SOT-23-6 |
Transistor Polarity | NPN, PNP | Configuration | Dual |
Collector- Emitter Voltage VCEO Max | 60 V | Collector- Base Voltage VCBO | 80 V |
Emitter- Base Voltage VEBO | 7 V | Collector-Emitter Saturation Voltage | 500 mV, 600 mV |
Maximum DC Collector Current | 1 A | Pd - Power Dissipation | 1.7 W |
Gain Bandwidth Product fT | 180 MHz, 150 MHz | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Series | ZXTD4591 |
Brand | Diodes Incorporated | Height | 1.3 mm |
Length | 3 mm | Product Type | BJTs - Bipolar Transistors |
Factory Pack Quantity | 3000 | Subcategory | Transistors |
Technology | Si | Width | 1.75 mm |
Unit Weight | 0.000229 oz |
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