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ZXMHC3A01T8TA

DIODES INC. - ZXMHC3A01T8TA - Dual MOSFET, Enhancement Mode, N and P Channel, 3.1 A, 30 V, 0.12 ohm, 10 V, 1 V

Inventory:6,266

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Overview of ZXMHC3A01T8TA

Operating within a wide temperature range of -55°C to +150°C, this MOSFET is suitable for use in harsh environments where temperature fluctuations are common. With a total of 8 pins in a SOIC case style, this component is easy to incorporate into existing circuit designs

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case SM-8
Transistor Polarity N-Channel, P-Channel Number of Channels 4 Channel
Vds - Drain-Source Breakdown Voltage 30 V Id - Continuous Drain Current 3.1 A, 2.3 A
Rds On - Drain-Source Resistance 180 mOhms, 330 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1 V, 3 V Qg - Gate Charge 3.9 nC, 2.6 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 1.3 W Channel Mode Enhancement
Series ZXMHC3A Brand Diodes Incorporated
Configuration Quad Fall Time 2.3 ns
Product MOSFET Small Signals Product Type MOSFET
Rise Time 2.3 ns Factory Pack Quantity 1000
Subcategory MOSFETs Transistor Type 2 N-Channel, 2 P-Channel
Type Enhancement Mode Dual Channel Unit Weight 0.002610 oz

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