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ZXMN6A11GTA

ZXMN6A11G Series for Power Applications

Inventory:9,165

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Overview of ZXMN6A11GTA

The ZXMN6A11GTA is a N-channel enhancement mode MOSFET transistor designed for high-speed switching applications. It features a low on-resistance and high drain current capability, making it suitable for power management and motor control applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate terminal
  • D: Drain terminal
  • S: Source terminal
  • NC: No Connection
  • VSS: Ground connection
  • VDD: Positive power supply
  • EN: Enable pin for power control
  • IN: Input for control signal

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the ZXMN6A11GTA MOSFET for a visual representation.

Key Features

  • High-Speed Switching: The ZXMN6A11GTA is designed for fast switching applications, providing efficient power management.
  • Low On-Resistance: With its low on-resistance, this MOSFET minimizes power loss and heat generation during operation.
  • High Drain Current: Capable of handling high drain currents, making it suitable for applications requiring high power levels.
  • Enhancement Mode: The enhancement mode design ensures easy control of the transistor with logic-level signals.
  • Overtemperature Protection: Includes overtemperature protection to safeguard the MOSFET during high-temperature conditions.

Note: For detailed technical specifications, please refer to the ZXMN6A11GTA datasheet.

Application

  • Power Management: Ideal for power switching and control in various electronic systems.
  • Motor Control: Suitable for motor control applications requiring high-speed switching and efficiency.
  • Inverter Circuits: Used in inverter circuits for converting DC power to AC power efficiently.

Functionality

The ZXMN6A11GTA MOSFET transistor enables efficient and reliable switching operations in power management and motor control applications. It offers high performance and durability for demanding electronic systems.

Usage Guide

  • Power Supply: Connect VDD (Positive Supply) and VSS (Ground) to the respective power sources.
  • Control Signals: Apply proper logic signals to the Gate (G) terminal to control the switching of the MOSFET.
  • Load Connection: Connect the load between the Drain (D) and Source (S) terminals for power delivery.

Frequently Asked Questions

Q: Can the ZXMN6A11GTA be used in high-temperature environments?
A: Yes, the ZXMN6A11GTA includes overtemperature protection, allowing it to operate reliably in elevated temperature conditions.

Equivalent

For similar functionalities, consider these alternatives to the ZXMN6A11GTA:

  • IRF520N: This MOSFET transistor offers comparable performance and features for power switching applications.
  • FDD6637: A high-speed switching MOSFET with similar characteristics to the ZXMN6A11GTA, suitable for power management.
  • BSC010N04LS: Another N-channel MOSFET option for power control and motor drive applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case SOT-223-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V Id - Continuous Drain Current 4.4 A
Rds On - Drain-Source Resistance 120 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1 V Qg - Gate Charge 5.7 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 3.9 W Channel Mode Enhancement
Series ZXMN6A1 Brand Diodes Incorporated
Configuration Single Fall Time 4.6 ns
Forward Transconductance - Min 4.9 S Height 1.65 mm
Length 6.7 mm Product Type MOSFET
Rise Time 3.5 ns Factory Pack Quantity 1000
Subcategory MOSFETs Transistor Type 1 N-Channel
Type MOSFET Typical Turn-Off Delay Time 8.2 ns
Typical Turn-On Delay Time 1.95 ns Width 3.7 mm
Unit Weight 0.003951 oz

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