ZXMN6A11GTA
ZXMN6A11G Series for Power Applications
Inventory:9,165
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Part Number : ZXMN6A11GTA
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Package/Case : SOT-223-3
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Brand : Diodes Incorporated
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Components Classification : Single FETs, MOSFETs
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Datesheet : ZXMN6A11GTA DataSheet (PDF)
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Series : ZXMN6A1
The ZXMN6A11GTA is a N-channel enhancement mode MOSFET transistor designed for high-speed switching applications. It features a low on-resistance and high drain current capability, making it suitable for power management and motor control applications. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the ZXMN6A11GTA MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the ZXMN6A11GTA datasheet. Functionality The ZXMN6A11GTA MOSFET transistor enables efficient and reliable switching operations in power management and motor control applications. It offers high performance and durability for demanding electronic systems. Usage Guide Q: Can the ZXMN6A11GTA be used in high-temperature environments? For similar functionalities, consider these alternatives to the ZXMN6A11GTA:Overview of ZXMN6A11GTA
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the ZXMN6A11GTA includes overtemperature protection, allowing it to operate reliably in elevated temperature conditions.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | SOT-223-3 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 60 V | Id - Continuous Drain Current | 4.4 A |
Rds On - Drain-Source Resistance | 120 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 1 V | Qg - Gate Charge | 5.7 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 3.9 W | Channel Mode | Enhancement |
Series | ZXMN6A1 | Brand | Diodes Incorporated |
Configuration | Single | Fall Time | 4.6 ns |
Forward Transconductance - Min | 4.9 S | Height | 1.65 mm |
Length | 6.7 mm | Product Type | MOSFET |
Rise Time | 3.5 ns | Factory Pack Quantity | 1000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Type | MOSFET | Typical Turn-Off Delay Time | 8.2 ns |
Typical Turn-On Delay Time | 1.95 ns | Width | 3.7 mm |
Unit Weight | 0.003951 oz |
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