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IRLD024PBF

Vishay IRLD024PBF N-channel MOSFET Transistor, 2.5 A, 60 V, 4-Pin HVMDIP

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Overview of IRLD024PBF

The IRLD024PBF is a N-Channel MOSFET transistor designed for power switching applications.This transistor features a low on-state resistance,high current capability,and fast switching speed,making it suitable for various power control and conversion tasks.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • G:Gate
  • D:Drain
  • S:Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRLD024PBF MOSFET for a visual representation.

Key Features

  • N-Channel MOSFET: The IRLD024PBF is an N-Channel MOSFET suitable for high-power switching applications.
  • Low On-State Resistance: This transistor offers a low on-state resistance for efficient power management.
  • High Current Capability: With its high current-handling capacity, the IRLD024PBF can manage significant power loads.
  • Fast Switching Speed: The fast switching speed of this MOSFET ensures rapid response in switching applications.
  • Robust Design: The IRLD024PBF is designed to withstand high power and voltage levels, ensuring durability in demanding conditions.

Note: For detailed technical specifications, please refer to the IRLD024PBF datasheet.

Application

  • Power Switching: Ideal for power switching applications in various electronic circuits and systems.
  • Motor Control: Suitable for motor control applications requiring efficient power management.
  • Voltage Regulation: Used in voltage regulation circuits for precise control of power output.

Functionality

The IRLD024PBF N-Channel MOSFET transistor is designed to control power flow in electronic circuits effectively and efficiently. It provides high-performance switching capabilities for power management applications.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the Gate pin to control the switching of the MOSFET.
  • Load Connection: Connect the load to the Drain pin for effective power switching.
  • Ground Connection: Connect the Source pin to the ground reference of the circuit.

Frequently Asked Questions

Q: Is the IRLD024PBF suitable for PWM applications?
A: Yes, the IRLD024PBF is compatible with Pulse Width Modulation (PWM) signals for precise power control.

Equivalent

For similar functionalities, consider these alternatives to the IRLD024PBF:

  • IRF3205: A high-power N-Channel MOSFET offering similar performance characteristics to the IRLD024PBF.
  • IRLR024: Another N-Channel MOSFET option with comparable features to the IRLD024PBF for power switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case DIP-4 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 2.5 A Rds On - Drain-Source Resistance 100 mOhms
Vgs - Gate-Source Voltage - 10 V, + 10 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 18 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 1.3 W
Channel Mode Enhancement Brand Vishay / Siliconix
Configuration Single Fall Time 41 ns
Forward Transconductance - Min 3.7 S Height 3.37 mm
Length 6.29 mm Product Type MOSFET
Rise Time 110 ns Factory Pack Quantity 2500
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 23 ns Typical Turn-On Delay Time 11 ns
Width 5 mm Unit Weight 0.031537 oz

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