ZXM61P03FTA
30V P-Channel HDMOS Transistor in SOT23 Package
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
5 | $0.122 | $0.61 |
50 | $0.107 | $5.35 |
150 | $0.100 | $15.00 |
500 | $0.091 | $45.50 |
3000 | $0.083 | $249.00 |
6000 | $0.081 | $486.00 |
Inventory:7,027
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Part Number : ZXM61P03FTA
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Package/Case : SOT-23-3
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Brands : Diodes Incorporated
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Components Categories : Single FETs, MOSFETs
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Datesheet : ZXM61P03FTA DataSheet (PDF)
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Series : ZXM61P03
The ZXM61P03FTA is a P-channel enhancement mode MOSFET transistor designed for use in power management applications. It features a compact and efficient design suitable for various electronic circuits where low power consumption is essential. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the ZXM61P03FTA MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the ZXM61P03FTA datasheet. Functionality The ZXM61P03FTA is a P-channel MOSFET transistor designed for power management applications, providing efficient and reliable power control in various electronic circuits. Usage Guide Q: What is the maximum current rating of the ZXM61P03FTA? Q: Is the ZXM61P03FTA suitable for high-temperature environments? For similar functionalities, consider these alternatives to the ZXM61P03FTA:Overview of ZXM61P03FTA
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The ZXM61P03FTA has a maximum current rating of X amps.
A: Yes, the ZXM61P03FTA is designed to operate efficiently in high-temperature environments, ensuring reliable performance.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 1.1 A | Rds On - Drain-Source Resistance | 350 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
Qg - Gate Charge | 4.8 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 806 mW |
Channel Mode | Enhancement | Series | ZXM61P03 |
Brand | Diodes Incorporated | Configuration | Single |
Fall Time | 5 ns | Forward Transconductance - Min | 0.44 S |
Height | 1.02 mm | Length | 3.04 mm |
Product | MOSFET Small Signals | Product Type | MOSFET |
Rise Time | 2.9 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Type | MOSFET | Typical Turn-Off Delay Time | 8.9 ns |
Typical Turn-On Delay Time | 1.9 ns | Width | 1.4 mm |
Unit Weight | 0.000282 oz |
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