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ZXM61P03FTA

30V P-Channel HDMOS Transistor in SOT23 Package

Quantity Unit Price(USD) Ext. Price
5 $0.122 $0.61
50 $0.107 $5.35
150 $0.100 $15.00
500 $0.091 $45.50
3000 $0.083 $249.00
6000 $0.081 $486.00

Inventory:7,027

*The price is for reference only.
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Overview of ZXM61P03FTA

The ZXM61P03FTA is a P-channel enhancement mode MOSFET transistor designed for use in power management applications. It features a compact and efficient design suitable for various electronic circuits where low power consumption is essential.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • S: Source
  • D: Drain

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the ZXM61P03FTA MOSFET for a visual representation.

Key Features

  • P-Channel MOSFET: Utilizes P-channel enhancement mode MOSFET technology for power control applications.
  • Low Power Consumption: Designed for efficient power management with minimal power loss.
  • Compact Size: Features a small form factor suitable for space-constrained electronic designs.
  • High Efficiency: Provides high efficiency in switching and power control applications.
  • Wide Operating Voltage Range: Supports a wide range of operating voltages for versatile application compatibility.

Note: For detailed technical specifications, please refer to the ZXM61P03FTA datasheet.

Application

  • Power Management Systems: Ideal for use in power management systems for efficient control of power distribution.
  • Voltage Regulation: Suitable for voltage regulation applications where low power consumption is critical.
  • Switching Circuits: Used in switching circuits to control the flow of power with high efficiency.

Functionality

The ZXM61P03FTA is a P-channel MOSFET transistor designed for power management applications, providing efficient and reliable power control in various electronic circuits.

Usage Guide

  • Gate Connection: Connect the Gate (G) to the controlling signal for power switching.
  • Source and Drain: Connect the Source (S) to the ground and the Drain (D) to the load for power control.
  • Operating Voltage: Ensure the operating voltage is within the specified range for optimal performance.

Frequently Asked Questions

Q: What is the maximum current rating of the ZXM61P03FTA?
A: The ZXM61P03FTA has a maximum current rating of X amps.

Q: Is the ZXM61P03FTA suitable for high-temperature environments?
A: Yes, the ZXM61P03FTA is designed to operate efficiently in high-temperature environments, ensuring reliable performance.

Equivalent

For similar functionalities, consider these alternatives to the ZXM61P03FTA:

  • VN7010AJ-E: A similar P-channel MOSFET transistor with comparable performance characteristics.
  • FDC6327C: This MOSFET provides similar power management capabilities and efficiency.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 1.1 A Rds On - Drain-Source Resistance 350 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 4.8 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 806 mW
Channel Mode Enhancement Series ZXM61P03
Brand Diodes Incorporated Configuration Single
Fall Time 5 ns Forward Transconductance - Min 0.44 S
Height 1.02 mm Length 3.04 mm
Product MOSFET Small Signals Product Type MOSFET
Rise Time 2.9 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Type MOSFET Typical Turn-Off Delay Time 8.9 ns
Typical Turn-On Delay Time 1.9 ns Width 1.4 mm
Unit Weight 0.000282 oz

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