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ZXTC2063E6TA

ZXTC2063E6TA NPN/PNP Dual-Transistor, SOT23-6, 40V RoHScompatible

Quantity Unit Price(USD) Ext. Price
1 $0.469 $0.47
10 $0.413 $4.13
30 $0.386 $11.58
100 $0.358 $35.80
500 $0.258 $129.00
1000 $0.250 $250.00

Inventory:6,866

*The price is for reference only.
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Overview of ZXTC2063E6TA

The ZXTC2063E6TA is a low-power, high-side N-channel MOSFET transistor driver designed for use in portable and battery-powered applications. It features a wide operating voltage range and low quiescent current, making it suitable for power management and load switching applications in various electronic devices.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • IN: Input control signal
  • VCC: Positive power supply
  • VOUT: Output voltage
  • GND: Power ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the ZXTC2063E6TA for a visual representation.

Key Features

  • Low-Power MOSFET Driver: Provides high-side N-channel MOSFET switching with low quiescent current, ideal for battery-powered applications.
  • Wide Operating Voltage Range: Operates from a 2.5V to 18V supply, making it compatible with various power sources.
  • High Output Current: Capable of driving high current loads, suitable for power management and load switching applications.
  • Enable Input: The IN pin allows for external control of the MOSFET switching, adding flexibility to the power management system.

Note: For detailed technical specifications, please refer to the ZXTC2063E6TA datasheet.

Application

  • Battery-Powered Devices: Ideal for power management and load switching in portable electronic devices.
  • LED Lighting: Suitable for driving LED loads and controlling LED brightness in lighting applications.
  • Portable Instruments: Used in portable instrumentation for efficient power control and management.

Functionality

The ZXTC2063E6TA is a low-power, high-side N-channel MOSFET driver that enables efficient power management and load switching in battery-powered and portable applications. It provides a compact and reliable solution for controlling high current loads.

Usage Guide

  • Power Supply: Connect VCC (Pin 2) to the positive power supply within the 2.5V to 18V operating range.
  • Input Control: Apply the control signal to the IN pin to enable or disable the high-side MOSFET switching.
  • Load Connection: Connect the load to the VOUT (Pin 3) and GND (Pin 4) terminals for high-side switching.

Frequently Asked Questions

Q: What is the maximum operating voltage for the ZXTC2063E6TA?
A: The ZXTC2063E6TA can operate with a maximum supply voltage of 18V.

Q: Is the ZXTC2063E6TA suitable for driving high current loads?
A: Yes, the ZXTC2063E6TA is capable of driving high current loads, making it suitable for power management applications.

Equivalent

For similar functionalities, consider these alternatives to the ZXTC2063E6TA:

  • TPS2065DGN: This is a high-side power switch IC from Texas Instruments, offering similar functionality with integrated protection features.
  • LTC7001: This is a high-side N-channel MOSFET driver from Linear Technology, providing high current drive capability and flexible control features.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Bipolar Transistors - BJT RoHS Details
Mounting Style SMD/SMT Package / Case SOT-26-6
Transistor Polarity NPN, PNP Configuration Dual
Collector- Emitter Voltage VCEO Max 40 V Collector- Base Voltage VCBO 130 V, 45 V
Emitter- Base Voltage VEBO 7 V Collector-Emitter Saturation Voltage 135 mV, 175 mV
Maximum DC Collector Current 3.5 A, 3 A Pd - Power Dissipation 1.7 W
Gain Bandwidth Product fT 190 MHz, 270 MHz Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series ZXTC2063
Brand Diodes Incorporated DC Collector/Base Gain hfe Min 300 at 10 mA, 2 V at NPN, 280 at 1 A, 2 V at NPN, 40 at 3.5 A, 2 V at NPN, 300 at 10 mA, 2 V at PNP, 200 at 1 A, 2 V at PNP, 20 at 3 A, 2 V at PNP
DC Current Gain hFE Max 300 at 10 mA, 2 V Height 1.3 mm
Length 3.1 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 3000 Subcategory Transistors
Technology Si Width 1.8 mm
Unit Weight 0.000529 oz

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