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ZXMHC6A07T8TA

ZXMHC6A07T8TA is a MOSFET product with a half-bridge configuration, featuring two N-channel and two P-channel MOSFETs in a SOT-223-8 package

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Overview of ZXMHC6A07T8TA

The ZXMHC6A07T8TA is a high-speed N-channel MOSFET transistor designed for switching applications in power management circuits. This MOSFET features a low threshold voltage and high switching speed, making it suitable for high-frequency switching operations.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate Pin
  • D: Drain Pin
  • S: Source Pin

Circuit Diagram

Include a circuit diagram illustrating the connections and application of the ZXMHC6A07T8TA MOSFET for better understanding.

Key Features

  • High-Speed Switching: The ZXMHC6A07T8TA offers high-speed switching capabilities, making it suitable for applications requiring rapid switching.
  • Low Threshold Voltage: With a low threshold voltage, this MOSFET can be easily driven by logic level signals.
  • Low On-Resistance: The MOSFET has low ON-state resistance, leading to minimal power loss and improved efficiency.
  • Enhanced Power Management: Ideal for power management circuits due to its high switching speed and low ON-resistance.
  • Compact Package: Available in a compact surface-mount SOT-23 package for space-efficient designs.

Note: For detailed technical specifications, please refer to the ZXMHC6A07T8TA datasheet.

Application

  • Power Management: Suitable for power switching and management applications in various electronic devices.
  • Motor Control: Can be used in motor control circuits for efficient and high-speed switching of motors.
  • LED Lighting: Ideal for driving and controlling LEDs due to its fast switching speed.

Functionality

The ZXMHC6A07T8TA MOSFET is a high-speed switch that enables efficient power management and control in electronic circuits. It facilitates rapid switching operations with low power loss.

Usage Guide

  • Gate Connection: Connect the gate pin (G) to the driving circuit or controller.
  • Drain Connection: Connect the drain pin (D) to the load or output device.
  • Source Connection: Connect the source pin (S) to the ground or common reference point.

Frequently Asked Questions

Q: Is the ZXMHC6A07T8TA suitable for high-power applications?
A: While the ZXMHC6A07T8TA is optimized for high-speed switching, it is recommended to consider the power dissipation and current ratings for high-power applications.

Equivalent

For similar functionality, consider these alternatives to the ZXMHC6A07T8TA:

  • IRF540N: A power MOSFET with similar switching characteristics but higher power handling capacity.
  • BSS138: A logic level MOSFET suitable for low-power switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case SM-8
Transistor Polarity N-Channel, P-Channel Number of Channels 4 Channel
Vds - Drain-Source Breakdown Voltage 60 V Id - Continuous Drain Current 1.8 A, 1.5 A
Rds On - Drain-Source Resistance 300 mOhms, 425 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1 V Qg - Gate Charge 3.2 nC, 5.1 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 1.3 W Channel Mode Enhancement
Series ZXMHC6A Brand Diodes Incorporated
Configuration Quad Fall Time 2 ns, 5.8 ns
Forward Transconductance - Min 2.3 S, 1.8 S Height 1.6 mm
Length 6.7 mm Product MOSFET Small Signals
Product Type MOSFET Rise Time 1.4 ns, 2.3 ns
Factory Pack Quantity 1000 Subcategory MOSFETs
Transistor Type 2 N-Channel, 2 P-Channel Type MOSFET
Typical Turn-Off Delay Time 4.9 ns, 13 ns Typical Turn-On Delay Time 1.8 ns, 1.6 ns
Width 3.7 mm Unit Weight 0.002610 oz

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