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IRL1104S

104A 40V HEXFET 3-Pin N-Channel MOSFET Transistor IRL1104S by International Rectifier

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Overview of IRL1104S

The IRL1104S is a power MOSFET transistor designed for high-performance switching applications. It features a low on-state resistance and high current handling capability, making it suitable for power management in various electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRL1104S MOSFET for a visual representation.

Key Features

  • Low On-State Resistance: The IRL1104S offers a low RDS(on) value, minimizing power loss during operation.
  • High Current Capability: With its high current handling capacity, this MOSFET can support various power applications.
  • Fast Switching Speed: The IRL1104S provides fast switching times, enabling efficient switching in high-frequency circuits.
  • Enhanced Thermal Performance: Designed for improved thermal dissipation, ensuring reliable operation under high power conditions.

Note: For detailed technical specifications, please refer to the IRL1104S datasheet.

Application

  • Power Management: Ideal for power switching and control in DC-DC converters, motor drives, and power supplies.
  • Pulse Circuits: Suitable for pulse circuits, inverters, and electronic switches requiring high-speed switching.
  • Motor Control: Used in motor control applications for efficient power management and control.

Functionality

The IRL1104S is a power MOSFET transistor that serves as a reliable switch for controlling high-power circuits. Its low on-state resistance and high current capability make it a versatile component for power management applications.

Usage Guide

  • Gate Control: Apply the appropriate voltage to the Gate pin to control the switching of the MOSFET.
  • Drain-Source Connection: Connect the load circuit between the Drain and Source pins for power switching.
  • Thermal Considerations: Ensure proper heat sinking to maintain the MOSFET within safe operating temperatures.

Frequently Asked Questions

Q: Is the IRL1104S suitable for high-frequency applications?
A: Yes, the IRL1104S offers fast switching speeds, making it suitable for high-frequency switching circuits.

Equivalent

For similar functionalities, consider these alternatives to the IRL1104S:

  • IRL1104: This is a similar power MOSFET with comparable specifications to the IRL1104S for power switching applications.
  • IRF1104S: Another high-performance power MOSFET option with characteristics suitable for power management circuits.
  • IRLB1104: A MOSFET transistor offering similar capabilities to the IRL1104S for power control and switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series HEXFET® Package Tube
Product Status Obsolete FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 104A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 62A, 10V Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 4.5 V Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 3445 pF @ 25 V Power Dissipation (Max) 2.4W (Ta), 167W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount
Supplier Device Package D2PAK Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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