ISC750P10LMATMA1
Trans MOSFET P-CH 100V 3.8A 8-Pin TDSON EP T/R
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Part Number : ISC750P10LMATMA1
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Package/Case : PG-TDSON-8
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Brand : Infineon Technologies
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Components Classification : Single FETs, MOSFETs
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Datesheet : ISC750P10LMATMA1 DataSheet (PDF)
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Series : ISC750P10LM
Overview of ISC750P10LMATMA1
P-Channel 100 V 27.3A Surface Mount PG-TDSON-8-7
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Series | ISC750P10 | Product Status | Active |
| FET Type | P-Channel | Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V | Current - Continuous Drain (Id) @ 25°C | 27.3A |
| Mounting Type | Surface Mount | Supplier Device Package | PG-TDSON-8-7 |
| Package / Case | PG-TDSON-8 | Base Product Number | ISC750 |
| Manufacturer | Infineon | Product Category | MOSFET |
| RoHS | Details | Mounting Style | SMD/SMT |
| Transistor Polarity | P-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 100 V | Id - Continuous Drain Current | 32 A |
| Rds On - Drain-Source Resistance | 75 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2 V | Qg - Gate Charge | 46 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
| Pd - Power Dissipation | 188 W | Channel Mode | Enhancement |
| Brand | Infineon Technologies | Configuration | Single |
| Fall Time | 24.8 ns | Forward Transconductance - Min | 51 S |
| Product Type | MOSFET | Rise Time | 47.2 ns |
| Factory Pack Quantity | 5000 | Subcategory | MOSFETs |
| Typical Turn-Off Delay Time | 100 ns | Typical Turn-On Delay Time | 35.6 ns |
| Part # Aliases | ISC750P10LM SP005412113 |
Warranty & Returns
Warranty, Returns, and Additional Information
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