• packageimg
packageimg

F4-50R12MS4

Contact for details

Quantity Unit Price(USD) Ext. Price
1 $135.952 $135.95
200 $54.246 $10,849.20
500 $52.435 $26,217.50
1000 $51.539 $51,539.00

Inventory:9,674

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for F4-50R12MS4 using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of F4-50R12MS4

The F4-50R12MS4 is a high-power IGBT module designed for use in various power electronic applications. It features a high voltage and current rating, making it suitable for power conversion and motor drive systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Collector:C
  • Emitter:E
  • Gate:G
  • Collector:C
  • Emitter:E
  • Gate:G

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the F4-50R12MS4 for a visual representation.

Key Features

  • High Voltage and Current Rating: The F4-50R12MS4 offers a high voltage and current capability, suitable for high-power applications.
  • IGBT Technology: This module utilizes Insulated Gate Bipolar Transistor (IGBT) technology for efficient power switching and control.
  • Low Saturation Voltage: The low saturation voltage ensures minimal power loss during operation, contributing to high efficiency.
  • Isolation: The module provides electrical isolation, enhancing safety and preventing voltage transients.
  • High Thermal Conductivity: Designed for effective heat dissipation, allowing for continuous operation under high power loads.

Note: For detailed technical specifications, please refer to the F4-50R12MS4 datasheet.

Application

  • Power Conversion Systems: Ideal for use in power converters and inverters for renewable energy systems and industrial applications.
  • Motor Drives: Suitable for motor drive applications requiring high-power switching and efficient control.
  • Induction Heating: Used in induction heating systems for rapid and efficient heating of metal components.

Functionality

The F4-50R12MS4 is a high-power IGBT module designed for reliable power switching and control in various industrial and energy-related applications.

Usage Guide

  • Power Supply: Connect the required voltage supply to the collector and emitter terminals.
  • Drive Signal: Apply the appropriate gate drive signal to control the switching of the IGBT module.
  • Heat Dissipation: Ensure proper thermal management to maintain the module within its operating temperature range.

Frequently Asked Questions

Q: Is the F4-50R12MS4 suitable for high-frequency switching applications?
A: Yes, the F4-50R12MS4 is capable of high-frequency switching and is designed for efficient operation in such applications.

Equivalent

For similar functionalities, consider these alternatives to the F4-50R12MS4:

  • IXYS IGBT Module: This module from IXYS Corporation offers comparable high-power switching capabilities with similar voltage and current ratings.
  • Mitsubishi Electric IGBT Module: A high-power IGBT module from Mitsubishi Electric, providing efficient power control for industrial and renewable energy systems.
  • Infineon IGBT Module: This IGBT module from Infineon Technologies offers advanced power switching features suitable for high-power applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series EconoDUAL™2 Package Bulk
Product Status Obsolete Configuration Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max) 1200 V Current - Collector (Ic) (Max) 70 A
Power - Max 355 W Vce(on) (Max) @ Vge, Ic 3.75V @ 15V, 50A
Current - Collector Cutoff (Max) 1 mA Input Capacitance (Cies) @ Vce 3.4 nF @ 25 V
Input Standard NTC Thermistor Yes
Operating Temperature -40°C ~ 125°C (TJ) Mounting Type Chassis Mount
Package / Case Module Base Product Number F4-50R

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

VN0610LL

VN0610LL

Voltage-controlled switch
2SK3050

2SK3050

High-Power N-Type MOSFET
APT100GN60LDQ4G

APT100GN60LDQ4G

600V 229A N-Channel IGBT Chip for Transistor TO-264
IXTK90P20P

IXTK90P20P

This MOSFET, designated as IXTK90P20P, offers a maximum current capacity of 90
IRG4BC20S

IRG4BC20S

IGBT IRG4BC20S TO220 19A
IRFIZ48VPBF

IRFIZ48VPBF

N-Channel Silicon MOSFET with a Voltage Rating of 60V and Current Handling Capacity of 39A in TO-220FP Package
BUK7611-55A

BUK7611-55A

Metal-oxide Semiconductor Field-Effect Transistor
DMP3010LK3-13

DMP3010LK3-13

DMP3010LK3-13 is a MOSFET boasting a BVDSS (Breakdown Voltage Drain to Source) range of 25V-30V-30V
SI7850DP-T1-E3

SI7850DP-T1-E3

60V, 6.2A Power MOSFET
IRLML2402PBF

IRLML2402PBF

Trans MOSFET N-CH Si 20V 1.2A 3-Pin SOT-23