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MTB50P03HDLT4G

Low on-resistance of 25 mOhm

Inventory:9,288

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Overview of MTB50P03HDLT4G

The MTB50P03HDLT4G is a Power MOSFET designed for high voltage and high-speed switching applications. It features a low on-resistance and low gate charge, making it ideal for efficient power management in various electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the MTB50P03HDLT4G MOSFET for a visual representation.

Key Features

  • High Voltage Rating: The MTB50P03HDLT4G is capable of handling high voltages, making it suitable for high-power applications.
  • Low On-Resistance: With a low on-resistance, this MOSFET minimizes power losses and heat generation in switching circuits.
  • Low Gate Charge: The low gate charge enables fast and efficient switching, contributing to overall system performance.
  • High-Speed Switching: This MOSFET offers rapid switching capabilities, making it ideal for high-frequency applications.
  • Robust Construction: The MTB50P03HDLT4G is built to withstand high voltage and current stresses, ensuring reliable operation in demanding environments.

Note: For detailed technical specifications, please refer to the MTB50P03HDLT4G datasheet.

Application

  • Switching Power Supplies: Ideal for use in high-voltage switching power supply designs for efficient power management.
  • Motor Control: Suitable for motor drive applications where high-speed switching and voltage handling are essential.
  • LED Lighting: The MTB50P03HDLT4G can be employed in LED driver circuits for controlling and regulating LED lighting systems.

Functionality

The MTB50P03HDLT4G Power MOSFET is designed to facilitate high-speed and high-voltage switching operations, making it a reliable component for power management and control in various electronic applications.

Usage Guide

  • Gate-Source Voltage: Apply appropriate gate-source voltage to enable or disable the MOSFET's conduction.
  • Drain-Source Connection: Connect the load or other circuit components to the MOSFET's drain and source terminals for power switching.

Frequently Asked Questions

Q: Is the MTB50P03HDLT4G suitable for high-frequency applications?
A: Yes, the MTB50P03HDLT4G offers high-speed switching capabilities, making it suitable for high-frequency applications.

Equivalent

For similar functionalities, consider these alternatives to the MTB50P03HDLT4G:

  • IRF4905LPBF: A power MOSFET with comparable high-voltage and high-speed switching characteristics.
  • FQP50N06: This MOSFET offers similar performance and voltage ratings to the MTB50P03HDLT4G for power control applications.
  • STP55NF06L: A power MOSFET from STMicroelectronics, providing high-speed switching and high voltage handling for power management.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Last Shipments Compliance PbAHP
Package Type D2PAK-3 / TO-263-2 Case Outline 418B-04
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 800
ON Target N Channel Polarity P-Channel
Configuration Single V(BR)DSS Min (V) 30
VGS Max (V) 15 VGS(th) Max (V) 2
ID Max (A) 50 PD Max (W) 125
RDS(on) Max @ VGS = 4.5 V (mΩ) 25 Qg Typ @ VGS = 4.5 V (nC) 74
Ciss Typ (pF) 3500 Pricing ($/Unit) Price N/A

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