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SIS903DN-T1-GE3

SIS903DN-T1-GE3 MOSFET with PowerPAK 1212-8 packaging

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Overview of SIS903DN-T1-GE3

The SIS903DN-T1-GE3 is a dual N-channel MOSFET IC designed for power management applications.This IC features low ON-resistance and high-speed switching capabilities,making it ideal for efficient power control in various electronic devices.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • GATE1:Gate terminal for MOSFET 1
  • SOURCE1:Source terminal for MOSFET 1
  • DRAIN1:Drain terminal for MOSFET 1
  • GND:Ground connection
  • DRAIN2:Drain terminal for MOSFET 2
  • SOURCE2:Source terminal for MOSFET 2
  • GATE2:Gate terminal for MOSFET 2
  • VCC:Power supply voltage

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SIS903DN-T1-GE3 IC for a visual representation.

Key Features

  • Dual N-Channel MOSFETs:The SIS903DN-T1-GE3 incorporates two N-channel MOSFETs for power switching and control.
  • Low ON-Resistance:This IC offers low ON-resistance for minimal power loss and efficient power management.
  • High-Speed Switching:With high-speed switching capabilities,this IC enables rapid power control in electronic circuits.
  • Compact Package:Available in a compact package,the SIS903DN-T1-GE3 facilitates space-saving designs in electronic applications.
  • Overcurrent Protection:Includes overcurrent protection features to safeguard connected components from excessive current flow.

Note:For detailed technical specifications,please refer to the SIS903DN-T1-GE3 datasheet.

Application

  • Power Management Systems:Suitable for power management systems in various electronic devices and appliances.
  • DC-DC Converters:Ideal for use in DC-DC converters for efficient power conversion and regulation.
  • Motor Control:Can be utilized in motor control circuits for precise and responsive motor operation.

Functionality

The SIS903DN-T1-GE3 dual N-channel MOSFET IC enables efficient power control and switching in electronic circuits,offering low ON-resistance and high-speed performance for reliable power management.

Usage Guide

  • Power Supply:Connect VCC(Pin 8)to the power supply voltage for proper operation.
  • Gate Control:Apply appropriate signals to the GATE1/2 pins to control the switching of the respective MOSFETs.
  • Load Connection:Connect the SOURCE1/2 and DRAIN1/2 pins to the load for power switching and control.

Frequently Asked Questions

Q:Can the SIS903DN-T1-GE3 be used in high-temperature environments?
A:Yes,the SIS903DN-T1-GE3 is designed to operate within a wide temperature range,making it suitable for high-temperature applications.

Equivalent

For similar functionalities,consider these alternatives to the SIS903DN-T1-GE3:

  • SI3441DV-T1-GE3:A dual N-channel MOSFET IC offering comparable performance characteristics to the SIS903DN-T1-GE3.
  • NTGD4167PT1G:A power MOSFET IC with dual N-channel configuration for efficient power management applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case PowerPAK-1212-8 Transistor Polarity P-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 6 A Rds On - Drain-Source Resistance 20.1 mOhms
Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 400 mV
Qg - Gate Charge 28 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 23 W
Channel Mode Enhancement Tradename TrenchFET, PowerPAK
Series SIS Brand Vishay / Siliconix
Configuration Dual Fall Time 63 ns
Forward Transconductance - Min 32 S Product Type MOSFET
Rise Time 54 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 2 P-Channel
Typical Turn-Off Delay Time 135 ns Typical Turn-On Delay Time 30 ns
Unit Weight 0.032487 oz

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