SISS26DN-T1-GE3

Name: SISS26DN-T1-GE3
Brand: Vishay Siliconix
Rating: 4.5 (10 reviews)

Power MOSFET featuring a Vds rating of 60 volts and Vgs rating of 20 volts, enclosed in a PowerPAK 1212-8S package

Inventory:9,636

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Part Number : SISS26DN-T1-GE3
Package/Case : PowerPAK®1212-8S
Brand : Vishay Siliconix
Components Classification : Single FETs, MOSFETs
Datesheet : SISS26DN-T1-GE3 DataSheet (PDF)
Series : SISS26DN

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Overview of SISS26DN-T1-GE3

N-Channel 60 V 60A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S

Key Features

High-efficiency operation
Fault-tolerant design
Overcurrent protection
Surge protection

Application

Due to its features and specifications, SISS26DN-T1-GE3 can be used in various applications, including power management, load switching, and battery protection circuits.
It is commonly employed in electronic devices and systems that require efficient power control or switching functions.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series	TrenchFET® Gen IV	Product Status	Active
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V	Rds On (Max) @ Id, Vgs	4.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	3.6V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	37 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	1710 pF @ 30 V
Power Dissipation (Max)	57W (Tc)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Supplier Device Package	PowerPAK® 1212-8S
Package / Case	PowerPAK® 1212-8S	Base Product Number	SISS26

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