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IXFT170N25X3HV

50V 170A power transistor

Inventory:5,925

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Overview of IXFT170N25X3HV

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The IXFT170N25X3HV is a high-voltage high-speed IGBT (Insulated Gate Bipolar Transistor) designed for various power applications. This IGBT offers efficient switching and excellent performance in demanding environments.

Key Features
  • High Voltage Rating: The IXFT170N25X3HV is for high voltage applications, making it suitable for power conversion and motor control systems.
  • Fast Switching: It provides fast switching characteristics, enabling rapid control of power flow in electronic circuits.
    • <>High Current Capability: With its high current handling capacity, this IGBT can support heavy load applications as industrial drives and inverters.
  • Low Saturation Voltage: The low saturation voltage reduces power losses during operation, contributing to high efficiency power electronics systems.
  • Temperature Stability: The device offers good thermal stability, ensuring reliable operation over wide temperature range.




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Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V) 250 Maximum On-Resistance @ 25 ℃ (Ohm) 0.0074
Continuous Drain Current @ 25 ℃ (A) 170 Gate Charge (nC) 190
Input Capacitance, CISS (pF) 13500 Thermal resistance [junction-case] (K/W) 0.14
Configuration Single Package Type TO-268HV
Typical Reverse Recovery Time (ns) 140 Power Dissipation (W) 890
Sample Request Yes Check Stock Yes

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