SISS27ADN-T1-GE3

Name: SISS27ADN-T1-GE3
Brand: Siliconix
Rating: 4.5 (10 reviews)

MOSFET -30V Vds 20V Vgs PowerPAK 1212-8S

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Part Number : SISS27ADN-T1-GE3
Package/Case : PowerPAK1212-8
Brand : Siliconix
Components Classification : Single FETs, MOSFETs
Datesheet : SISS27ADN-T1-GE3 DataSheet (PDF)
Series : SISS27ADN

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Overview of SISS27ADN-T1-GE3

The SISS27ADN-T1-GE3 is a N-channel MOSFET designed for high-frequency power applications. It features a low gate charge and fast switching speed, making it suitable for use in power supply and motor control circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

G: Gate terminal for the MOSFET
D: Drain terminal for the MOSFET
S: Source terminal for the MOSFET
GND: Ground connection
VCC: Power supply voltage
NC: No connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SISS27ADN-T1-GE3 MOSFET for a visual representation.

Key Features

High-Frequency Power Applications: Ideal for high-frequency power circuits in various electronic systems.
Low Gate Charge: Features a low gate charge for efficient and fast switching.
Fast Switching Speed: Provides fast switching characteristics suitable for power electronics applications.
Low RDS(on): Offers low on-state resistance for reduced power dissipation and improved efficiency.
High Voltage Rating: Withstands high voltage levels, making it suitable for high-power applications.

Note: For detailed technical specifications, please refer to the SISS27ADN-T1-GE3 datasheet.

Application

Power Supply Circuits: Suitable for use in power supply circuits to control and regulate power distribution.
Motor Control Systems: Used in motor control applications for efficient and reliable power management.
Inverter Systems: Ideal for high-frequency inverter systems requiring fast switching capabilities.

Functionality

The SISS27ADN-T1-GE3 is a N-channel MOSFET designed for high-frequency power applications, featuring low gate charge and fast switching speed. It provides efficient power control and management in electronic systems.

Usage Guide

Gate Connection: Connect the gate (G) terminal to the control circuit for switching control.
Power Connections: Connect the drain (D) and source (S) terminals to the power supply and load respectively.

Frequently Asked Questions

Q: What are the typical applications for the SISS27ADN-T1-GE3 MOSFET?
A: The SISS27ADN-T1-GE3 is commonly used in power supply circuits, motor control systems, and high-frequency inverter applications due to its fast switching and low on-state resistance characteristics.

Q: What is the maximum voltage rating of the SISS27ADN-T1-GE3?
A: The SISS27ADN-T1-GE3 features a high voltage rating suitable for use in high-power applications, typically up to [insert maximum voltage rating].

Equivalent

For similar functionalities, consider these alternatives to the SISS27ADN-T1-GE3:

SIHU27N60E-GE3: This N-channel MOSFET offers similar performance and characteristics to the SISS27ADN-T1-GE3, providing reliable power control in high-frequency applications.
SIHD27N60E-GE3: Another alternative from Vishay Semiconductor, the SIHD27N60E-GE3 features comparable specifications and is suitable for similar power management applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category	MOSFET	RoHS	Details
REACH	Details	Technology	Si
Mounting Style	SMD/SMT	Package / Case	PowerPAK-1212-8
Transistor Polarity	P-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	30 V	Id - Continuous Drain Current	50 A
Rds On - Drain-Source Resistance	4.2 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	2.2 V	Qg - Gate Charge	117 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	57 W	Channel Mode	Enhancement
Tradename	TrenchFET, PowerPAK	Series	SIS
Brand	Vishay Semiconductors	Configuration	Single
Fall Time	22 ns	Forward Transconductance - Min	57 S
Height	1.04 mm	Length	3.3 mm
Product Type	MOSFET	Rise Time	35 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 P-Channel	Typical Turn-Off Delay Time	38 ns
Typical Turn-On Delay Time	48 ns	Width	3.3 mm
Unit Weight	0.032487 oz

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